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IGZO film etching solution

A technology of etching solution and thin film, which is applied in the direction of surface etching composition, electrical components, semiconductor/solid-state device manufacturing, etc. Effects of concentration fluctuation, easy storage, moderate etch rate

Active Publication Date: 2021-11-09
HANGZHOU GREENDA CHEM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the prior art, the patent CN103980905A discloses an etching solution for oxide material systems, the etching solution includes an oxide etching solution, and plays a role in adjusting the consistency The conditioner and water are generally applicable to the etching of Sn, Zn, Al, Ga, In-based and their alloy oxide thin film materials, but the formula is complex, the process is cumbersome, and the cost is high;
[0004] Patent CN 107564809 A discloses an etching solution of an IGZO film layer and an etching method thereof, the etching solution of the IGZO film layer includes acid, phosphate, hydrogen peroxide, and water, and the pH value of the etching solution does not exceed 5, which can effectively control the etching rate, make the etching rate uniform, and stably etch the IGZO film layer without introducing some impurities that affect the electrical properties of IGZO. However, its formula Contains hydrogen peroxide, which is unstable and may react with organic acids such as oxalic acid in the formula, making the etching solution ineffective;
[0005] Patent CN 109439329 A discloses a novel IGZO etching solution for flat panel display array manufacturing process, the etching solution includes 1-10% sulfuric acid, 0.5-10% nitric acid, acetic acid 0.5-10%, fluoride 0.1-0.6%, surfactant 5ppm-1000ppm and the balance of ultra-pure water, it has a good etching effect on the new corrosion-resistant IGZO material, and the etching rate is high , small amount of undercut, no etching residue, but this formula contains fluoride, F may diffuse into the IGZO film layer, and an additional de-F treatment process may be required. At the same time, the formula containing fluorine may corrode the lower film layer, resulting In addition, the fluorine-containing waste liquid is difficult to handle, which will lead to an increase in the cost of subsequent wastewater treatment

Method used

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Examples

Experimental program
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Embodiment 1

[0029] The IGZO thin film etching solution is made from the raw materials in the following percentage by weight:

[0030] 2.5wt% oxalic acid, 1.0wt% etch rate stabilizer, 1.0wt% moisture volatilization inhibitor, 0.3wt% surfactant, and the balance is water, wherein the etch rate stabilizer is potassium dihydrogen phosphate, and the long The carbon chain fatty alcohol is cetyl alcohol, the short carbon chain fatty alcohol is ethanol, and the ratio of cetyl alcohol to ethanol is 0.16:1;

[0031] (1) Prepare the preset amount of oxalic acid and water, prepare the required oxalic acid solution with the oxalic acid and water, and put it in the prepared container for later use;

[0032] (2) Take the oxalic acid solution prepared in step (1), and add it into the mixing tank;

[0033] (3) Put the mixing tank in step (2) in a stirring environment, add the preset etching rate stabilizer, moisture evaporation inhibitor, surfactant and the remaining water into the mixing tank according t...

Embodiment 2

[0037] The IGZO thin film etching solution is made from the raw materials in the following percentage by weight:

[0038] 3.0wt% oxalic acid, 0.5wt% etch rate stabilizer, 3.0wt% moisture volatilization inhibitor, 0.1wt% surfactant, and the balance is water, wherein the etch rate stabilizer is sodium dihydrogen phosphate, and the long The carbon chain fatty alcohol is heptadecanol, the short carbon chain fatty alcohol is n-butanol, and the ratio of heptadecanol to n-butanol is 3:1;

[0039] (1) Prepare the preset amount of oxalic acid and water, prepare the required oxalic acid solution with the oxalic acid and water, and put it in the prepared container for later use;

[0040] (2) Take the oxalic acid solution prepared in step (1), and add it into the mixing tank;

[0041] (3) Put the mixing tank in step (2) in a stirring environment, add the preset etching rate stabilizer, moisture evaporation inhibitor, surfactant and the remaining water into the mixing tank according to a ...

Embodiment 3

[0045] The IGZO thin film etching solution is made from the raw materials in the following percentage by weight:

[0046] Oxalic acid 5.0wt%, etch rate stabilizer 0.2wt%, moisture volatilization inhibitor 2.1wt%, surfactant 1.0wt%, balance is water, wherein etch rate stabilizer is dipotassium hydrogen phosphate, long The carbon chain fatty alcohol is stearyl alcohol, the short carbon chain fatty alcohol is isopropanol, and the ratio of stearyl alcohol to isopropanol is 0.1:1;

[0047] (1) Prepare the preset amount of oxalic acid and water, prepare the required oxalic acid solution with the oxalic acid and water, and put it in the prepared container for later use;

[0048] (2) Take the oxalic acid solution prepared in step (1), and add it into the mixing tank;

[0049] (3) Put the mixing tank in step (2) in a stirring environment, add the preset etching rate stabilizer, moisture evaporation inhibitor, surfactant and the remaining water into the mixing tank according to a certa...

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Abstract

The invention relates to an IGZO film etching solution which is prepared from the following raw materials in percentage by weight: 2-5 wt% of oxalic acid, 0.1-1 wt% of an etching rate stabilizer, 1-3 wt% of a moisture volatilization inhibitor, 0.01-1 wt% of a surfactant and the balance of water. The etching solution is simple in components, simple in process, stable in property, easy to store, moderate in etching rate, good in etching uniformity and high in precision.

Description

technical field [0001] The invention relates to the field of etching in the panel display industry, in particular to an IGZO film etchant. Background technique [0002] With the development of display technology, liquid crystal displays are gradually developing in the direction of large size and high resolution, which means that the charging time for pixels is getting shorter and shorter, which puts forward more challenges for the active layer of thin film transistor (TFT). High requirements. IGZO is an amorphous oxide containing indium, gallium and zinc. It is a channel layer material used in the new generation of thin film transistor technology. The carrier mobility is 20 to 30 times that of amorphous silicon, which can Greatly improve the charge and discharge rate of TFT to the pixel electrode, improve the response speed of the pixel, and achieve a faster refresh rate. In addition, due to the reduction in the number of transistors and the increase in the light transmitta...

Claims

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Application Information

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IPC IPC(8): C09K13/00H01L21/34
CPCC09K13/00H01L29/66969
Inventor 胡涛邢攸美李盈盈王小眉方伟华尹云舰施珂
Owner HANGZHOU GREENDA CHEM