Copper-indium-selenium-tellurium/cadmium sulfide core-shell structure quantum dot, preparation method thereof, and preparation method of photo-anode
A core-shell structure, copper indium selenide technology, applied in photosensitive devices, photovoltaic power generation, electrolytic capacitors, etc., can solve the problems of limited effective application, low photoelectric conversion efficiency, low material photo/chemical stability, etc., and achieve good photostability properties, photoelectric conversion characteristics, enhanced visible light absorption, and improved performance
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Embodiment 1
[0030] This embodiment provides a method for preparing copper indium selenide tellurium nuclear quantum dots, comprising the following steps:
[0031] (1) Take 63.5 mg of tellurium powder, disperse and dissolve it in 1 mL of trioctylphosphine (TOP) solution, and dissolve it sufficiently by ultrasonic to obtain a TOP-Te solution with a concentration of 0.5 M; weigh 79 mg of selenium powder, and also disperse and dissolve it in 1 mL of trioctylphosphine (TOP) solution. Octylphosphine (TOP) was fully dissolved by ultrasound to obtain a colorless and transparent TOP-Se solution with a concentration of 1M;
[0032] (2) Weigh 0.4mmol cuprous iodide, 0.4mmol indium acetate, disperse and dissolve in 4mL n-dodecyl mercaptan and 2mL octadecene solution, add to the reaction bottle, heat up to 90°C in a nitrogen atmosphere, stir and dissolve until transparent solution, then add 0.8mL of the TOP-Te solution prepared in the above steps, stir to dissolve, and cool to room temperature for lat...
Embodiment 2
[0036] In this example, based on the copper indium selenium tellurium nuclear quantum dots provided in Example 1, the copper indium selenium tellurium / cadmium sulfide core-shell quantum dots were prepared, including the following steps:
[0037] (1) Take 6 mmol of cadmium oxide, 12 mL of oleic acid, and 18 mL of octadecene in a reaction flask, stir and heat up to 140 degrees Celsius under nitrogen atmosphere, remove water and air in the reaction system, keep for three minutes, and then heat up to 210 degrees Celsius, Fully react and dissolve to a colorless transparent solution, then cool to room temperature for later use;
[0038](2) Take 2mmol of sulfur powder, disperse it in 2mL of trioctylphosphine and 8mL of octadecene solution, ultrasonically dissolve it to a colorless and transparent solution, then mix cadmium and sulfur precursor solutions 1:1 to obtain a 0.1M precursor mixture liquid, save it for later use;
[0039] (3) Take 1 mL of nuclear quantum dot solution with a...
Embodiment 3
[0042] In this example, based on the copper indium selenide tellurium / cadmium sulfide core-shell quantum dots provided in Example 2, a titanium dioxide photoanode sensitized by copper indium selenium tellurium / cadmium sulfide core-shell quantum dots was prepared, including the following steps:
[0043] (1) Clean the FTO conductive glass with ultrasonic wave in acetone, ethanol and deionized water successively for 30min, and blow dry with nitrogen; ) solution is selectively spin-coated on the FTO conductive glass substrate, then put into a muffle furnace and heated to 500 ° C for calcination and kept for 30 minutes to obtain an FTO substrate electrode with a titanium dioxide barrier layer;
[0044] (2) Select a suitable area of the calcined titanium dioxide barrier layer FTO substrate, use titanium dioxide slurry (18NR-AO) for scrape coating, the thickness of the scraper coating is 15 μm, and place it on a heating plate at 120 ° C after static tape casting at room temperature ...
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