Method for removing hydrogen halide in polysilicon production tail gas
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- JIANGSU ZHONGNENG POLYSILICON TECH DEV
- Publication Date
- 2019-07-12
Abstract
Description
technical field
[0001] The invention relates to the technical field of preparation of high-purity polysilicon, in particular to a hydrogen halide removal process in tail gas of polysilicon production. Background technique
[0002] As the basic raw material of electronics industry and solar photovoltaic industry, high-purity polysilicon is known as "the cornerstone of the microelectronics building". With the economic recovery of the solar industry, the global demand for polysilicon is growing rapidly. The manufacture of high-purity polysilicon mainly adopts the modified Siemens method and the fluidized bed method, among which the modified Siemens method is the most widely used. The improved Siemens method uses trichlorosilane as the raw material, adopts a high-temperature reduction process, and in a high-purity hydrogen atmosphere, trichlorosilane is reduced and deposited on the silicon core to form polysilicon. The reduction reaction tail gas will contain a large amount of ...