A kind of organic-inorganic hybrid photoelectrochemical anode electrode and preparation method thereof
A photoelectrochemical and anode electrode technology, applied in the field of photoelectrochemistry, can solve the problems of limited earth reserves of precious metal elements, unsuitable mass production of photoelectrochemical electrodes, and high cost
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Embodiment 1
[0026] see figure 1 , will be 0.05-0.1Ωcm -1 The flat-bottomed silicon substrate was ultrasonically cleaned with acetone, ethanol, and deionized water for 20 minutes in sequence. After drying with inert gas, it was treated with a mixed solution of concentrated sulfuric acid and hydrogen peroxide at 60°C for 30 minutes. 3 Etch the silicon wafer with a mixed solution of 4.8mol / L HF for 10 minutes, rinse it with deionized water and put it in concentrated nitric acid to remove silver, take it out, rinse it and dry it, place it in the HF solution to remove the silicon oxide layer on the surface, and place it at a volume concentration react in 1% tetramethylammonium hydroxide (TMAH) solution for 30 seconds to prepare the silicon nanowire substrate. Add 5% and 1% dimethyl sulfoxide (DMSO) and Triton (polyethylene glycol octylphenyl ether) to (3,4-ethylenedioxythiophene)-poly( Styrene sulfonic acid) (PEDOT:PSS) in aqueous solution, and add the silane coupling agent γ-(2,3-epoxypropo...
Embodiment 2
[0031] see figure 2 , will be 0.05-0.1Ωcm -1 The flat-bottomed silicon was ultrasonically cleaned with acetone, ethanol, and deionized water for 20 minutes in sequence. After drying with inert gas, it was treated with a mixed solution of concentrated sulfuric acid and hydrogen peroxide at 60°C for 30 minutes, and the silicon oxide layer on the surface was removed in HF solution. Add 5% and 1% dimethyl sulfoxide (DMSO) and Triton to (3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) (PEDOT:PSS) aqueous solution respectively , and add 0.3% by volume of silane coupling agent γ-aminopropyltriethoxysilane, and stir evenly. Deposit PEDOT:PSS on the surface of the flat-bottom silicon substrate by spin coating method, the rotation speed is 3000RPM, and the time is 1min. In other embodiments, it can also be deposited by spraying, printing, gas phase polymerization, electrochemical polymerization or electrospinning. The organic conjugated molecules are deposited in a thickness o...
Embodiment 3
[0036] Set the resistance value to 1-10Ωcm -1 The flat-bottomed silicon substrate was ultrasonically cleaned with acetone, ethanol, and deionized water for 20 minutes in sequence. After drying with inert gas, it was treated with a mixed solution of concentrated sulfuric acid and hydrogen peroxide at 60°C for 30 minutes. 3 Etch the silicon wafer with a mixed solution of 4.8mol / L HF for 10 minutes, rinse it with deionized water and put it in concentrated nitric acid to remove silver, take it out, rinse it and dry it, place it in the HF solution to remove the silicon oxide layer on the surface, and place it at a volume concentration react in 1% tetramethylammonium hydroxide (TMAH) solution for 30 seconds to prepare the silicon nanowire substrate. The polyaniline solution was dissolved in dimethyl sulfoxide to prepare a 10 mg / ml solution, and a titanate coupling agent isopropyl tris(dioctyl pyrophosphate acyloxy) was added with a volume percentage of 0.5% ) titanate, stir evenly....
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