Manufacturing method of two-dimensional ordered TiO2 nanometer well film and application in self-energized photoelectric device

A technology of optoelectronic devices and nanowells, which is applied in semiconductor/solid-state device manufacturing, nanotechnology, electrical components, etc., can solve the problems of limited reaction rate, insufficient strength, unstable photocurrent, etc., and achieve low cost, low cost, The effect of ultra-fast response speed

Active Publication Date: 2017-01-18
FUDAN UNIV
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  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the performance of such devices currently has shortcomings such as photocurrent instability, insufficient intensity, and limited reaction rate.

Method used

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  • Manufacturing method of two-dimensional ordered TiO2 nanometer well film and application in self-energized photoelectric device
  • Manufacturing method of two-dimensional ordered TiO2 nanometer well film and application in self-energized photoelectric device
  • Manufacturing method of two-dimensional ordered TiO2 nanometer well film and application in self-energized photoelectric device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Embodiment 1, TiO 2 Fabrication of Nanowell Thin Films

[0045] Take a 2cm×2cm titanium sheet with a purity of 99.6% as the anode, a platinum wire mesh as the cathode, and a mixture of 35wt% ammonium fluoride, 10% dimethyl sulfoxide and 85% lactic acid as the electrolyte, and apply 45 V voltage anodized for 12 hours to produce TiO 2 Nanotube array film (morphology see figure 2 , a~b); wash with a large amount of ethanol, dry with nitrogen, then tear off the prepared film with adhesive tape, wash with ethanol and dry with nitrogen; then place the titanium sheet in a muffle furnace for calcination, and the program is set as It was heated from room temperature to 450° C. within 85 minutes, kept at this temperature for 120 minutes, and then naturally cooled to room temperature. Take out the titanium sheet substrate to obtain anatase-type two-dimensional ordered TiO 2 Nanowell film (morphology see figure 2 , c~d).

[0046] Repeat the above steps, increase the voltage...

Embodiment 2

[0049] Embodiment 2, TiO 2 Preparation of / NiO Heterojunction Composite and Testing of Self-Energizing Properties of Photoelectric Devices

[0050] Take 57 mg of nickel chloride hexahydrate and 288 mg of urea respectively, and dissolve them in a glass bottle with a blue cap of 100 mL of deionized water. After stirring at room temperature for 10 minutes, the TiO prepared in Example 1 is 2 The nanowell film substrate was placed flat on the bottom of the glass bottle, then placed in an oven at 90°C for 24 hours, and cooled to room temperature naturally after the reaction. The substrate was taken out and rinsed with water three times, then placed in a muffle furnace for calcination. The program was set to heat from room temperature to 450°C within 140 minutes, and kept at this temperature for 120 minutes. After the heat preservation was completed, it was naturally cooled to room temperature. Taking out the substrate can make layered mesoporous NiO nanostructure and TiO 2 Nanowel...

Embodiment 3

[0054] Embodiment 3, TiO 2 / PANI heterojunction composite preparation

[0055] Prepare 20 mL of 1 M sulfuric acid aqueous solution containing 27.39 μL of aniline monomer in a beaker, and the TiO prepared in Example 1 2 The nanowell film substrate was placed flat on the bottom of the beaker, and another 20 mL of 1 M sulfuric acid aqueous solution containing 68.48 mg of ammonium persulfate was quickly poured along the wall of the beaker. After mixing, react at -5°C for 24 hours, then take out the substrate, wash it with water three times, place it in an oven at 60°C and dry it to obtain polyaniline film and TiO 2 Nanowell Composite TiO 2 / PANI (see Figure 5 , a~b).

[0056] Repeat the above steps and raise the reaction temperature to 10°C for 24 hours to obtain polyaniline fibers and TiO 2 Composite of nanowells (morphology see Figure 5 , c~d).

[0057] Repeat the above steps twice, using the prepared TiO 2 / PANI composite film is used as the substrate for secondary re...

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Abstract

The invention belongs to the photoelectric device technology field and especially discloses a manufacturing method of a two-dimensional ordered TiO2 nanometer well film and an application in a self-energized photoelectric device. In the invention, firstly, a two-dimensional ordered TiO2 nanometer well film is manufactured; and then the manufactured TiO2 nanometer well film is taken as a substrate so as to manufacture a heterojunction compound with inorganic-substance layered NiO organic semiconductor polyaniline; and a self-energized photoelectric detector is constructed. The method comprises the following steps of anodic oxidation, physical stripping, heating calcinations, low temperature hydrothermal treatment, in situ polymerization and the like. In the invention, a complex and expensive manufacturing technology of the photoelectric device is avoided and rapid construction of a large-scale device can be realized; a photovoltaic effect of a p-n junction is used, under zero-bias driving, photon-generated carriers are rapidly separated under a built-in potential effect, self-energized performance of the device is realized and a light current is stable and a response speed is fast; and for ultraviolet light, good selection performance is possessed, and the photoelectric detector can be served as an energy-saving high frequency detector and a high-frequency photoelectric converter and can be applied in the fields of optical communication, military, medical treatment, photoelectric storage and the like.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic devices, in particular to two-dimensional ordered TiO 2 The preparation method of nanowell thin film, and this TiO 2 Application of nanowell films in the construction of self-powered optoelectronic devices with controllable properties. Background technique [0002] The heterojunction photodetector can effectively improve the photoresponsivity and response speed of the device at the same time by using the photovoltaic characteristics. It can work completely independently and continuously and stably under the condition of zero bias. This new type of device working under zero bias is called self-powered photodetector (H. Chen, H. Liu, Z. Zhang, K. Hu, X .Fang, Adv. Mater. 2016, 28, 403). At present, the preparation process of semiconductor optoelectronic devices is complex, time-consuming and expensive, making it difficult to popularize laboratory-scale research to industrial production....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L31/18H01L31/032H01L31/109B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01L21/02565H01L21/0259H01L21/02628H01L31/032H01L31/109H01L31/18Y02P70/50
Inventor 郑灵霞方晓生
Owner FUDAN UNIV
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