Method for planarization of potassium dihydrogen phosphate crystal optical surface
A potassium dihydrogen phosphate, optical surface technology, applied in chemical instruments and methods, crystal growth, single crystal growth and other directions, can solve the problems of low frequency error, high quality processing difficulty, brittleness, etc. Good mechanical properties and the effect of avoiding low frequency errors
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[0048] Example 1:
[0049] It includes the following steps: (1) First, use a single point diamond lathe to adjust the size of 50×50×10mm 3 Turning processing of KDP crystal sample 1 of type Ⅰ;
[0050] (2) Take the sample 1 which has been turned by single point diamond as the processing object, and deposit a layer of silicon film on the surface of the sample 1 by ion beam sputtering deposition; the target material of the film is silicon, the target material Specification: 536×114×10.5mm;
[0051] Sputtering deposition time: 1h The main process parameters of planarization are controlled as:
[0052] The ion beam voltage is 500V, and the ion beam current is 150mA;
[0053] The ion beam acceleration voltage is 300V, and the ion beam acceleration current is 100mA;
[0054] Working gas: Argon gas flow rate: 35sccm;
[0055] Working pressure: 5.71E-2Pa ion beam incident angle 45°;
[0056] (3) A flattened layer is obtained by vacuum cooling, and vacuum cooling: temperature 25°C, time 4h.
[0057...
Example Embodiment
[0061] Example 2:
[0062] It includes the following steps:
[0063] (1) First, use a single point diamond lathe to cut the size of 50×50×10mm 3 Turning processing of KDP crystal sample 2 of class Ⅰ;
[0064] (2) Take the sample 2 which has been turned by single-point diamond as the processing object, and deposit a layer of silicon film on the surface of the sample 2 by ion beam sputtering deposition method. The target specification: 536×114×10.5mm , The main process parameters of planarization are controlled as:
[0065] The ion beam voltage is 500V, and the ion beam current is 150mA;
[0066] The ion beam acceleration voltage is 300V, and the ion beam acceleration current is 100mA;
[0067] Working gas: argon gas flow rate: 35sccm;
[0068] Working pressure: 5.71E-2Pa ion beam incident angle 45° sputtering deposition time 1.5h;
[0069] (3) A planarized layer is obtained by vacuum cooling. Vacuum cooling: temperature 25℃, time 4h.
[0070] See image 3 , Figure 4 , Using Talysurf CCI-2...
Example Embodiment
[0074] Example 3:
[0075] It includes the following steps:
[0076] (1) First, use a single point diamond lathe to adjust the size of 50×50×10mm 3 Turning processing of KDP crystal sample 3 of class Ⅰ;
[0077] (2) The sample 3 that has been turned by single-point diamond turning is used as the processing object, and a layer of silicon film is sputtered and deposited on the surface of the sample 3 by ion beam sputtering deposition; target specification: 536×114×10.5 mm;
[0078] (3) A planarized layer is obtained by vacuum cooling.
[0079] The main process parameters of planarization are controlled as follows:
[0080] The ion beam voltage is 500V, and the ion beam current is 150mA;
[0081] The ion beam acceleration voltage is 300V, and the ion beam acceleration current is 100mA;
[0082] Working gas: argon gas flow rate: 35sccm;
[0083] Working pressure: 5.71E-2Pa ion beam incident angle 45°;
[0084] Sputtering deposition time 2h;
[0085] Vacuum cooling: temperature 25℃, time 4h.
[00...
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