Method for planarization of potassium dihydrogen phosphate crystal optical surface

A potassium dihydrogen phosphate, optical surface technology, applied in chemical instruments and methods, crystal growth, single crystal growth and other directions, can solve the problems of low frequency error, high quality processing difficulty, brittleness, etc. Good mechanical properties and the effect of avoiding low frequency errors

Active Publication Date: 2017-06-13
XIAN TECHNOLOGICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, potassium dihydrogen phosphate (KH 2 PO 4 ) crystals have the characteristics of brittleness, deliquescence, large thermal expansion coefficient, and sensitivity to temperature changes, which brings great difficulties to high-quality processing and has become one of the most difficult to process optical parts currently recognized.
Potassium dihydrogen phosphate (KH 2 PO 4 ) crystal-like optical crystal parts, if the periodic small-scale ripples and other defects are not eliminated, the surface roughness will not meet the requirements, which will affect the light transmission performance of the parts, causing light to be consumed in the optical path by scattering or other forms , so that the laser output energy and energy density are low during laser targeting, and potassium dihydrogen phosphate (KH 2 PO 4 ) crystal advantage
[0004] Potassium dihydrogen phosphate (KH) is currently used at home and abroad 2 PO 4 ) crystal-like processing and polishing methods include single-point diamond turning (SPDT), ultra-precision grinding, magnetorheological polishing, crystal micro-water mist dissolution polishing, etc. These methods inevitably give potassium dihydrogen phosphate (KH 2 PO 4 ) crystalloids cause a certain degree of subsurface damage, which in turn affects their role in optical engineering
Among the many processing methods, the mainstream processing method is single-point diamond turning, and the small-scale ripples produced by it will affect the potassium dihydrogen phosphate (KH 2 PO 4 )

Method used

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  • Method for planarization of potassium dihydrogen phosphate crystal optical surface
  • Method for planarization of potassium dihydrogen phosphate crystal optical surface
  • Method for planarization of potassium dihydrogen phosphate crystal optical surface

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0048] Example 1:

[0049] It includes the following steps: (1) First, use a single point diamond lathe to adjust the size of 50×50×10mm 3 Turning processing of KDP crystal sample 1 of type Ⅰ;

[0050] (2) Take the sample 1 which has been turned by single point diamond as the processing object, and deposit a layer of silicon film on the surface of the sample 1 by ion beam sputtering deposition; the target material of the film is silicon, the target material Specification: 536×114×10.5mm;

[0051] Sputtering deposition time: 1h The main process parameters of planarization are controlled as:

[0052] The ion beam voltage is 500V, and the ion beam current is 150mA;

[0053] The ion beam acceleration voltage is 300V, and the ion beam acceleration current is 100mA;

[0054] Working gas: Argon gas flow rate: 35sccm;

[0055] Working pressure: 5.71E-2Pa ion beam incident angle 45°;

[0056] (3) A flattened layer is obtained by vacuum cooling, and vacuum cooling: temperature 25°C, time 4h.

[0057...

Example Embodiment

[0061] Example 2:

[0062] It includes the following steps:

[0063] (1) First, use a single point diamond lathe to cut the size of 50×50×10mm 3 Turning processing of KDP crystal sample 2 of class Ⅰ;

[0064] (2) Take the sample 2 which has been turned by single-point diamond as the processing object, and deposit a layer of silicon film on the surface of the sample 2 by ion beam sputtering deposition method. The target specification: 536×114×10.5mm , The main process parameters of planarization are controlled as:

[0065] The ion beam voltage is 500V, and the ion beam current is 150mA;

[0066] The ion beam acceleration voltage is 300V, and the ion beam acceleration current is 100mA;

[0067] Working gas: argon gas flow rate: 35sccm;

[0068] Working pressure: 5.71E-2Pa ion beam incident angle 45° sputtering deposition time 1.5h;

[0069] (3) A planarized layer is obtained by vacuum cooling. Vacuum cooling: temperature 25℃, time 4h.

[0070] See image 3 , Figure 4 , Using Talysurf CCI-2...

Example Embodiment

[0074] Example 3:

[0075] It includes the following steps:

[0076] (1) First, use a single point diamond lathe to adjust the size of 50×50×10mm 3 Turning processing of KDP crystal sample 3 of class Ⅰ;

[0077] (2) The sample 3 that has been turned by single-point diamond turning is used as the processing object, and a layer of silicon film is sputtered and deposited on the surface of the sample 3 by ion beam sputtering deposition; target specification: 536×114×10.5 mm;

[0078] (3) A planarized layer is obtained by vacuum cooling.

[0079] The main process parameters of planarization are controlled as follows:

[0080] The ion beam voltage is 500V, and the ion beam current is 150mA;

[0081] The ion beam acceleration voltage is 300V, and the ion beam acceleration current is 100mA;

[0082] Working gas: argon gas flow rate: 35sccm;

[0083] Working pressure: 5.71E-2Pa ion beam incident angle 45°;

[0084] Sputtering deposition time 2h;

[0085] Vacuum cooling: temperature 25℃, time 4h.

[00...

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Abstract

The invention relates to an optical element surface planarization method. The method mainly focuses on potassium dihydrogen phosphate (KH2PO4, also known as KDP) nonlinear optical crystal material after turning of a single point diamond lathe as a processing target, with the method of ion beam sputtering deposition, a layer of film of silicon or silicon dioxide or the composite of silicon dioxide and silicon is deposited on the optical surface of the potassium dihydrogen phosphate optical crystal material, and then after vacuum cooling, a layer of silicon film or silicon dioxide film or silicon dioxide and silicon composite film with low surface roughness is formed on the surface of the potassium dihydrogen phosphate optical crystal material, wherein the upper surface of the film layer is a flattened surface. According to the optical element surface planarization method, a layer of silicon film or silicon dioxide film or silicon dioxide and silicon composite film with good mechanical properties, stable properties, low surface roughness and compactness is formed on the surface of the potassium dihydrogen phosphate optical crystal material, the technological process is simple, the surface of the potassium dihydrogen phosphate can achieve a good planarization effect in a low-temperature vacuum environment, and a good foundation is made for later ion beam polishing of potassium dihydrogen phosphate crystals.

Description

technical field [0001] The invention belongs to the technical field of surface planarization of optical elements, in particular to potassium dihydrogen phosphate (KH 2 PO 4 ) method for flattening crystal-like optical surfaces. Background technique [0002] Potassium dihydrogen phosphate (KH 2 PO 4 Also known as KDP) is a good nonlinear optical material and piezoelectric material, which has a large nonlinear optical coefficient, a low optical absorption coefficient and a high laser damage threshold. It is widely used in high-power laser system controlled thermonuclear reaction, nuclear explosion simulation, etc. It is the only crystal material that can be used in inertial confinement fusion ICF laser engineering, mainly for frequency doubling, photoelectric modulation and electro-optic switch. [0003] However, potassium dihydrogen phosphate (KH 2 PO 4 ) crystals have the characteristics of brittleness, deliquescence, large thermal expansion coefficient, and sensitivit...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/10C23C14/18C30B33/00C30B29/14
CPCC23C14/10C23C14/185C23C14/34C30B29/14C30B33/00
Inventor 刘卫国周顺王泉葛少博惠迎雪蔡长龙陈智利
Owner XIAN TECHNOLOGICAL UNIV
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