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Preparation method of manganese doped zinc sulfide quantum dot embedded fluorescent composite membrane

A technology of manganese-doped zinc sulfide and quantum dots, which is applied in the field of quantum dots and membrane materials, can solve the problems that have not been involved in the preparation method, and achieve good effects of low biological toxicity, strong self-cleaning ability, and stable fluorescence properties

Active Publication Date: 2019-04-19
合肥九州龙腾科技成果转化有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There are no related reports on the type of composite film embedded with manganese-doped zinc sulfide quantum dots in the literature at home and abroad, let alone its preparation method.

Method used

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  • Preparation method of manganese doped zinc sulfide quantum dot embedded fluorescent composite membrane
  • Preparation method of manganese doped zinc sulfide quantum dot embedded fluorescent composite membrane

Examples

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Effect test

Embodiment 1

[0025] Preparation of fluorescent composite film embedded with manganese-doped zinc sulfide quantum dots:

[0026] (1) Cut the cleaned silicon wafer into 1cm wide × 3cm long, and use piranha solution (mixed solution of 98% concentrated sulfuric acid and 30% hydrogen peroxide, volume ratio 7:3) to remove surface impurities, and then use pure water and ethanol Cleaned and dried with nitrogen gas;

[0027] (2) Cut the polymethyl methacrylate (PMMA) film into a size of 0.75cm wide × 1.0cm, clean the cut PMMA film, blow dry with nitrogen, and then cover the PMMA film on the processed silicon wafer, clip clamp spare;

[0028] (3) The film-forming monomer, cross-linking agent, quantum dots (ZnS: Mn 2+ QDs) were dissolved in a certain amount of solvent, ultrasonically dispersed for 5 minutes, fully mixed and stirred and reacted for 1.0 hour to obtain a casting solution. Described film-forming monomer is acrylic acid (0.60mmol), methacrylic acid (0.20mmol), acrylamide (0.10mmol), an...

Embodiment 2

[0033] Preparation of fluorescent composite film embedded with manganese-doped zinc sulfide quantum dots:

[0034] (1) Cut the cleaned silicon wafer into 0.75cm wide × 2.5cm long, and use piranha solution (mixed solution of 98% concentrated sulfuric acid and 30% hydrogen peroxide, volume ratio 7:3) to remove surface impurities, and then use pure water Clean with ethanol and dry with nitrogen gas;

[0035] (2) Cut the polymethyl methacrylate (PMMA) film into a size of 0.75cm wide × 0.5cm, clean the cut PMMA film, blow dry with nitrogen, and then cover the PMMA film on the processed silicon wafer, clip clamp spare;

[0036] (3) The film-forming monomer, cross-linking agent, quantum dots (ZnS: Mn 2+ QDs) were dissolved in a certain amount of solvent, ultrasonically dispersed for 5 minutes, fully mixed and stirred and reacted for 1.0 hour to obtain a casting solution. The functional monomer is acrylic acid (0.45mmol), methacrylic acid (0.30mmol), acrylamide (0.15mmol), the cros...

Embodiment 3

[0041] Preparation of fluorescent composite film embedded with manganese-doped zinc sulfide quantum dots:

[0042] (1) Cut the cleaned silicon wafer into 0.8cm wide × 3.0cm long, and use piranha solution (mixed solution of 98% concentrated sulfuric acid and 30% hydrogen peroxide, volume ratio 7:3) to remove surface impurities, and then use pure water Clean with ethanol and dry with nitrogen gas;

[0043] (2) Cut the polymethyl methacrylate (PMMA) film into a size of 0.75cm wide × 0.5cm, clean the cut PMMA film, blow dry with nitrogen, and then cover the PMMA film on the processed silicon wafer, clip clamp spare;

[0044] (3) The film-forming monomer, cross-linking agent, quantum dots (ZnS: Mn 2+ QDs) were dissolved in a certain amount of solvent, ultrasonically dispersed for 5 minutes, fully mixed and stirred and reacted for 1.0 hour to obtain a casting solution. The functional monomer is acrylic acid (0.60mmol), methacrylic acid (0.20mmol), acrylamide (0.00mmol), the cross...

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Abstract

The invention discloses a preparation method of a manganese doped zinc sulfide quantum dot embedded fluorescent composite membrane. The method includes the steps of: dissolving manganese doped zinc sulfide fluorescent quantum dots, film-forming monomers, a cross-linking agent and an initiator in a solvent in order, and conducting ultrasonic dispersion and stirring to obtain a casting solution; atroom temperature, spreading the casting solution evenly on a matrix material, performing covering with polymethyl methacrylate, conducting heating in water bath under pressure to initiate polymerization; and then placing the obtained membrane into a hydrofluoric acid solution for etching to remove the matrix material, thus obtaining the fluorescent quantum dot embedded composite membrane. The method provided by the invention has the characteristics of simple synthesis, strong fluorescence performance, low biotoxicity and reusability. The prepared embedded composite membrane has the advantagesof good transparency, stable fluorescence, high mechanical strength and good self-cleaning ability, and has enormous application potential in optical sensing, biochemical analysis, water pollution, food analysis and environmental protection.

Description

technical field [0001] The invention relates to the field of quantum dots and film materials, in particular to a preparation method for preparing a manganese-doped zinc sulfide quantum dot embedded fluorescent composite film. Background technique [0002] Quantum dots (quantum dots, QD) are a new type of nanostructure material, and also a zero-dimensional semiconductor nanocrystal or nanocrystal. This nanocrystalline semiconductor, according to its elemental composition, is generally a microsphere composed of II-VI (CdTe, CdSe, etc.), III-V (InP, GaN, etc.) or IV-VI elements (PbSe, etc.), with a diameter of 1 -12nm. When the quantum dot size is reduced to a certain critical value (less than or close to the exciton Bohr radius of the material), these nanoparticles will have different quantum confinement, and their material structure and properties will change from macroscopic to microscopic. Because quantum dots are affected by quantum size effects and dielectric confinemen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/56B82Y20/00B82Y30/00B82Y40/00
CPCC09K11/025C09K11/574B82Y20/00B82Y30/00B82Y40/00
Inventor 张鑫李彦松韦宇平
Owner 合肥九州龙腾科技成果转化有限公司
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