Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of dielectric wetting composite material

A composite material, dielectric wetting technology, applied in the direction of coating, etc., can solve the problem that high-dielectric inorganic materials cannot meet the requirements of the hydrophobic layer, and achieve good chemical stability, good hydrophobicity, and stable chemical composition.

Inactive Publication Date: 2020-05-01
江苏海獭新材料科技有限公司
View PDF1 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The technical problem to be solved by the present invention: Aiming at the problem that the dielectric constant of most hydrophobic polymers is less than 3, and the high-dielectric inorganic materials cannot meet the requirements of the hydrophobic layer, a method for preparing a dielectric-wetting composite material is provided

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Take tetraethyl orthosilicate, parylene, absolute ethanol, and ammonia water with a mass fraction of 5%, mix ethyl orthosilicate, parylene, and absolute alcohol, and stir magnetically to obtain a reaction solution. Add ammonia water with a mass fraction of 5% to the reaction solution, continue to stir the reaction to obtain the reactant, place the reactant in an oven for drying treatment, and cool to room temperature to obtain the precursor; take the precursor, epoxy-terminated polydimethylformaldehyde Base siloxane, perfluorosilane, cyclohexane, Dow Corning Sygard184 curing agent, mix epoxy-terminated polydimethylsiloxane, perfluorosilane and cyclohexane, and stir magnetically to obtain mixed solution A. Add the precursor to the mixed solution A, and carry out ultrasonic dispersion to obtain the mixed solution B. Add Dow Corning Sygard184 curing agent to the mixed solution B, stir at a constant temperature, and continue to stir at room temperature for 5 hours to obtain ...

Embodiment 2

[0032] Take tetraethyl orthosilicate, parylene, absolute ethanol, and ammonia water with a mass fraction of 5%, mix ethyl orthosilicate, parylene, and absolute alcohol, and stir magnetically to obtain a reaction solution. Add ammonia water with a mass fraction of 5% to the reaction solution, continue to stir the reaction to obtain the reactant, place the reactant in an oven for drying treatment, and cool to room temperature to obtain the precursor; take the precursor, epoxy-terminated polydimethylformaldehyde Base siloxane, perfluorosilane, cyclohexane, Dow Corning Sygard184 curing agent, mix epoxy-terminated polydimethylsiloxane, perfluorosilane and cyclohexane, and stir magnetically to obtain mixed solution A. Add the precursor to the mixed solution A, and carry out ultrasonic dispersion to obtain the mixed solution B. Add Dow Corning Sygard184 curing agent to the mixed solution B, stir at a constant temperature, and continue to stir at room temperature for 5 hours to obtain ...

Embodiment 3

[0034] Take tetraethyl orthosilicate, parylene, absolute ethanol, and ammonia water with a mass fraction of 5%, mix ethyl orthosilicate, parylene, and absolute alcohol, and stir magnetically to obtain a reaction solution. Add ammonia water with a mass fraction of 5% to the reaction solution, continue to stir the reaction to obtain the reactant, place the reactant in an oven for drying treatment, and cool to room temperature to obtain the precursor; take the precursor, epoxy-terminated polydimethylformaldehyde Base siloxane, perfluorosilane, cyclohexane, Dow Corning Sygard184 curing agent, mix epoxy-terminated polydimethylsiloxane, perfluorosilane and cyclohexane, and stir magnetically to obtain mixed solution A. Add the precursor in the mixed solution A and carry out ultrasonic dispersion to obtain the mixed solution B. Add Dow Corning Sygard184 curing agent to the mixed solution B, stir at a constant temperature, and continue to stir at room temperature for 6 hours to obtain a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a preparation method of a dielectric wetting composite material, belonging to the technical field of dielectric wetting materials. According to the invention, tetraethoxysilane is used as a precursor, a sol-gel method is adopted to prepare nanometer silicon dioxide microspheres in situ in poly-p-xylene, and epoxy-terminated polydimethylsiloxane and perfluorosilane are separately used for hydrophobization treatment so as to prepare the dielectric wetting composite material; poly-p-xylylene is inactive in chemical properties and conformal in surface coating, and is a good polymer insulating layer; the dielectric constant of silicon dioxide is relatively high, so driving voltage can be effectively reduced; as the nanometer silicon dioxide microspheres are prepared insitu in poly-p-xylylene, so poly-p-xylylene has good hydrophobic property and a relatively high dielectric constant; the chemical state of polydimethylsiloxane is dimethyl silicone oil, and the dimethyl silicone oil is non-toxic and odorless, and has physiological inertness and good chemical stability, so the prepared dielectric wetting composite material has good hydrophobicity and weather resistance.

Description

technical field [0001] The invention relates to a preparation method of a dielectric wetting composite material, belonging to the technical field of dielectric wetting materials. Background technique [0002] In recent decades, the miniaturization and miniaturization of devices is the main development trend. Electrowetting technology is a technical means to control and process small droplets by using electrowetting phenomenon. The control means mainly depends on the change of surface tension by applied voltage, so as to control the wettability of solid / liquid surface. [0003] The electrowetting phenomenon is widely used in the fields of physics, physicochemistry, electrochemistry and electrical engineering. The wettability of the solid-liquid interface is adjusted by an external electric field, which in turn causes changes in its own surface tension, driving fluid movement or changing its shape. The wetting performance between the two phases determines the performance of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C09D165/04C09D183/06C09D7/61C09D7/63
CPCC09D165/04C09D183/06C09D7/61C09D7/63C09D7/70C08L83/06C08K7/18C08K3/36C08K5/54C08L65/04
Inventor 石雅琴
Owner 江苏海獭新材料科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com