A method for the controllable preparation and patterning of two-dimensional transition metal dichalcogenide layers based on surface plasmon waves
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- UNIV OF SCI & TECH OF CHINA
- Publication Date
- 2021-04-23
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Abstract
Description
technical field
[0001] The invention belongs to the technical field of preparation of two-dimensional nanomaterials, and in particular relates to a preparation method for the controllable preparation and patterning of two-dimensional transition metal dichalcogenide layers based on surface plasma waves. Background technique
[0002] Two-dimensional transition metal dichalcogenide materials have become a hotspot in basic scientific research due to their wonderful layer-dependent properties, especially in the fields of optoelectronics, spintronics, and recently, valleytronics. The reduction of the number of layers of 2D transition metal dichalcogenides to the atomic layer induces significant changes in the electronic structure and crystal symmetry, which in turn affects their optical, electrical, and magnetic properties. For example, due to the bandgap change and interband optical selection from bulk to monolayer, in monolayer MX 2 Strong photoluminescence and valley polarizat...