Perovskite photovoltaic cell and preparation method thereof

A perovskite battery and perovskite technology, applied in the field of solar cells, can solve problems such as battery stability degradation, achieve the effects of reducing interface defects, reducing charge accumulation, and reducing costs

Active Publication Date: 2020-09-25
WUHAN INSTITUTE OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Wang Ning's research group introduced n-type goethite (FeOOH) quantum dots (QD) into the perovskite light-absorbing layer and found that iron, oxygen, and hydroxyl in FeOOH can interact with iodine, lead, and methylamine, respectively, by delaying the crystallization kinetics. High-quality perovskite films with l

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  • Perovskite photovoltaic cell and preparation method thereof
  • Perovskite photovoltaic cell and preparation method thereof
  • Perovskite photovoltaic cell and preparation method thereof

Examples

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Effect test

Embodiment 1

[0044] A planar structure perovskite photovoltaic cell, the structure schematic diagram is as follows figure 1 As shown, its structure includes a transparent conductive substrate 1, an electron transport layer 2, an interface passivation layer 3, a perovskite photosensitive active layer 4, a hole transport layer 5 and a metal electrode 6 from bottom to top, and its preparation method includes the following steps :

[0045] (1) Cleaning treatment of transparent conductive substrate: To clean the FTO conductive glass sheet, first soak the FTO conductive glass sheet in warm water containing a detergent (such as liquid detergent) for 20 minutes, then rinse it with clean water after repeated scrubbing; Then use polishing powder for polishing; then put them into containers containing deionized water, acetone and alcohol for ultrasonic treatment for 20 minutes, and finally put them in deionized water to rinse twice, dry them with a nitrogen gun and put them in an oven Dry at 60°C; ...

Embodiment 2

[0057] A planar structure perovskite photovoltaic cell, its structure includes a transparent conductive substrate, an electron transport layer, an interface passivation layer, a perovskite photosensitive active layer, a hole transport layer and a metal electrode from bottom to top, and its preparation method includes the following step:

[0058] (1) cleaning FTO conductive glass substrate: with embodiment 1;

[0059] (2) Preparation of electron transport layer: preparation of SnO on FTO substrate 2 Thin film, and put it into the ultraviolet ozone cleaning instrument for ultraviolet ozone treatment for 15 minutes, and quickly transfer the treated FTO substrate into the glove box;

[0060] (3) SnO on the substrate by solution method 2 Preparation of Fe on thin film 1.84 Mg 0.16 o 3 The thin film acts as an interface passivation layer;

[0061] a. Take 1mg of Fe 1.84 Mg 0.16 o 3 Add 2 ml of methanol to the particles, ultrasonically disperse twice, 30 minutes each time, c...

Embodiment 3

[0070] A planar structure perovskite photovoltaic cell, its structure includes a transparent conductive substrate, an electron transport layer, an interface passivation layer, a perovskite photosensitive active layer, a hole transport layer and a metal electrode from bottom to top, and its preparation method includes the following step:

[0071] (1) cleaning of ITO conductive glass substrate: with embodiment 1;

[0072] (2) Electron transport layer preparation: prepare SnO on the cleaned ITO conductive glass substrate 2 Quantum dot film, and put it into the ultraviolet ozone cleaning instrument, and treat with ultraviolet ozone for 10 minutes under atmospheric atmosphere and room temperature;

[0073] (3) SnO on the substrate by solution method 2 Preparation of Fe on Quantum Dot Films 1.80 Mg 0.20 o 3 The thin film acts as an interface passivation layer;

[0074] a. Take 1mg of Fe 1.80 Mg 0.20 o 3 Add 2 ml of methanol to the powder, ultrasonically disperse twice, 30 m...

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Abstract

The invention relates to a high-performance perovskite cell and a preparation method thereof. The perovskite solar cell uses a Fe2-xMgxO3 thin film prepared by a solution method as an interface passivation layer to passivate adjacent interfaces of a perovskite photosensitive layer of a perovskite photovoltaic cell, x is greater than or equal to 0 and less than or equal to 0.2, and the thickness is30-40 nm. According to the perovskite photovoltaic cell, Fe2-xMgxO3 is used as an interface passivation layer, the preparation cost of the perovskite cell is greatly reduced, the crystallization quality of a perovskite thin film is improved by utilizing the interaction of iron, iodine, oxygen and lead, meanwhile, carriers can be rapidly migrated by the Fe2-xMgxO3 thin film, and charge accumulation at an interface is reduced; a proper amount of magnesium element can also form strong chemical bonds with surrounding ions, the structure of adjacent interfaces of perovskite is stabilized, interface defects are reduced, non-radiative recombination is reduced, and the purpose of improving device performance is improved.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a Fe battery prepared by a solution method. 2-x Mg x o 3 A perovskite photovoltaic cell with thin film passivation of the adjacent interface of the perovskite photosensitive active layer and a preparation method thereof. Background technique [0002] As a green, environmentally friendly, renewable and clean energy, solar energy plays an important role in the process of replacing primary energy such as fossil fuels. Among many solar cells, the highest efficiency of perovskite photovoltaic cells has jumped from 3.81% to 25.2% in ten years, which is comparable to the efficiency of indium gallium diselenide cells, cadmium telluride cells and polycrystalline silicon cells. . This is attributed to the advantages of organic-inorganic hybrid perovskite materials with low exciton binding energy, strong light absorption ability, and high carrier mobility. Although the highest effi...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/44H01L51/46H01L51/48
CPCH10K71/10H10K85/30H10K30/10H10K30/88H10K2102/00Y02E10/549
Inventor 秦平力王正春吴彤肖岚马良余雪里熊伦陈相柏
Owner WUHAN INSTITUTE OF TECHNOLOGY
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