A kind of perovskite photovoltaic cell and preparation method thereof

A perovskite battery and perovskite technology, applied in the field of solar cells, can solve problems such as battery stability degradation, achieve the effects of reducing interface defects, reducing costs, and reducing light absorption

Active Publication Date: 2022-07-19
WUHAN INSTITUTE OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Wang Ning's research group introduced n-type goethite (FeOOH) quantum dots (QD) into the perovskite light-absorbing layer and found that iron, oxygen, and hydroxyl in FeOOH can interact with iodine, lead, and methylamine, respectively, by delaying the crystallization kinetics. High-quality perovskite films with large grain sizes obtained through scientific engineering, which ultimately significantly improve the long-term stability and photoelectric conversion efficiency of devices (Small.2019, 1904372), these solutions still cannot solve the problem of degradation of battery stability caused by iron ion migration question

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  • A kind of perovskite photovoltaic cell and preparation method thereof
  • A kind of perovskite photovoltaic cell and preparation method thereof
  • A kind of perovskite photovoltaic cell and preparation method thereof

Examples

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Embodiment 1

[0044] A planar structure perovskite photovoltaic cell, the schematic diagram is as follows figure 1 As shown, its structure includes a transparent conductive substrate 1, an electron transport layer 2, an interface passivation layer 3, a perovskite photoactive layer 4, a hole transport layer 5 and a metal electrode 6 from bottom to top, and the preparation method includes the following steps :

[0045] (1) Cleaning treatment of transparent conductive substrate: To clean the FTO conductive glass sheet, first soak the FTO conductive glass sheet in warm water containing detergent (such as liquid detergent) for 20 minutes, and then rinse it with clean water after repeated scrubbing; Then use polishing powder for polishing treatment; then put it into a vessel containing deionized water, acetone and alcohol for ultrasonic treatment for 20 minutes, and finally put it in deionized water to rinse twice, dry it with a nitrogen gun and put it in an oven Dry at 60℃;

[0046] (2) Prepar...

Embodiment 2

[0057] A planar structure perovskite photovoltaic cell, the structure of which includes a transparent conductive substrate, an electron transport layer, an interface passivation layer, a perovskite photoactive layer, a hole transport layer and a metal electrode from bottom to top, and the preparation method includes the following step:

[0058] (1) Cleaning the FTO conductive glass substrate: the same as in Example 1;

[0059] (2) Preparation of electron transport layer: SnO was prepared on FTO substrate 2 film, and put it into the ultraviolet ozone cleaning instrument for ultraviolet ozone treatment for 15 minutes, and quickly transfer the treated FTO substrate into the glove box;

[0060] (3) SnO on the substrate by solution method 2 Preparation of Fe on thin films 1.84 Mg 0.16 O 3 The thin film acts as an interface passivation layer;

[0061] a. Take 1mg of Fe 1.84 Mg 0.16 O 3 Add 2 ml of methanol to the particles, ultrasonically disperse for 2 times, each time for...

Embodiment 3

[0070] A planar structure perovskite photovoltaic cell, the structure of which includes a transparent conductive substrate, an electron transport layer, an interface passivation layer, a perovskite photoactive layer, a hole transport layer and a metal electrode from bottom to top, and the preparation method includes the following step:

[0071] (1) cleaning of ITO conductive glass substrate: same as Example 1;

[0072] (2) Preparation of electron transport layer: SnO was prepared on the cleaned ITO conductive glass substrate 2 Quantum dot film, put it into the UV-ozone cleaning instrument, and treat it with UV-ozone for 10 minutes in the atmospheric atmosphere and room temperature;

[0073] (3) SnO on the substrate by solution method 2 Preparation of Fe on Quantum Dot Films 1.80 Mg 0.20 O 3 The thin film acts as an interface passivation layer;

[0074] a. Take 1mg of Fe 1.80 Mg 0.20 O 3 Add 2 ml of methanol to the powder, ultrasonically disperse it twice for 30 minute...

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Abstract

The invention relates to a high-performance perovskite cell and a preparation method thereof. The perovskite solar cell uses Fe prepared by a solution method. 2‑x Mg x O 3 The thin film is used as the interface passivation layer to passivate the adjacent interface of the perovskite photosensitive layer of the perovskite photovoltaic cell, where 0≤x≤0.2, and the thickness is 30-40 nm. The perovskite photovoltaic cell of the present invention uses Fe 2‑x Mg x O 3 For the interface passivation layer, the preparation cost of perovskite cells is greatly reduced, and the interaction between iron and iodine, oxygen and lead is used to improve the crystal quality of perovskite thin films. At the same time, Fe 2‑x Mg x O 3 The thin film can make the carriers move quickly and reduce the charge accumulation at the interface; an appropriate amount of magnesium can also form a strong chemical bond with the surrounding ions, stabilize the structure of the adjacent interface of the perovskite, reduce interface defects, and reduce non-radiative recombination. achieve the purpose of improving device performance.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a Fe prepared by a solution method 2-x Mg x O 3 A perovskite photovoltaic cell with an adjacent interface of a thin film passivation perovskite photoactive active layer and a preparation method thereof. Background technique [0002] As a green, renewable and clean energy, solar energy plays an important role in replacing primary energy sources such as fossil fuels. Among many solar cells, perovskite photovoltaic cells have rapidly jumped from 3.81% to the current maximum efficiency of 25.2% in ten years, which is comparable to that of indium gallium diselenide cells, cadmium telluride cells and polycrystalline silicon cells. . This is attributed to the advantages of organic-inorganic hybrid perovskite materials, such as low exciton binding energy, strong light absorption ability, and high carrier mobility. Although the highest efficiency of perovskite cells i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/46H01L51/48
CPCH10K71/10H10K85/30H10K30/10H10K30/88H10K2102/00Y02E10/549
Inventor 秦平力王正春吴彤肖岚马良余雪里熊伦陈相柏
Owner WUHAN INSTITUTE OF TECHNOLOGY
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