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Monocrystalline silicon texturing additive for weak rough polishing process and use method thereof

A technology of crystalline silicon texturing and additives, which is applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve problems such as difficult removal of diamond wire marks and limited photoelectric conversion efficiency of solar cells, and achieve The effect of improving photoelectric conversion efficiency, promoting the development of large-size thin slices, and reducing manufacturing costs

Pending Publication Date: 2022-04-12
嘉兴市小辰光伏科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The theoretical photoelectric conversion efficiency of silicon solar cells is about 33%, but the current actual solar conversion efficiency is between 22-25%, and the photoelectric conversion efficiency of solar cells is becoming more and more limited. Wafer thinning and large size become the next development trend. At present, the mainstream texturing process in the market is without rough polishing. It is difficult to remove diamond line marks, surface particles, organic matter and finger prints on the silicon surface by process texturing. The above dirt and diamond line marks are difficult to achieve only by texturing and etching. It is thin and cannot adapt to the previous high weight-reducing rough polishing process, so it can only remove diamond line marks and dirt through weak rough polishing. This requires the development of a texturing additive suitable for weak rough polishing. development is of great significance

Method used

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  • Monocrystalline silicon texturing additive for weak rough polishing process and use method thereof
  • Monocrystalline silicon texturing additive for weak rough polishing process and use method thereof
  • Monocrystalline silicon texturing additive for weak rough polishing process and use method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0031] 1) Additive preparation: With 1L deionized water as solvent, add 10g dehydrobispressoyl glucoside, 4g protocatechuic acid, 0.02g fatty alcohol phosphate potassium salt, 0.6g sodium carbonate, 0.2g sodium thiosulfate , 0.6g oxalic acid, the above substances are fully stirred and mixed; 2) Texturing liquid preparation: add 500g sodium hydroxide in 50L deionized water, add 250ml additives and stir well, and make alkaline texturing liquid; 3) Silicon chip cleaning liquid Preparation: Add 100g of sodium hydroxide to 50L of deionized water, fully dissolve and stir evenly to prepare a silicon wafer cleaning solution; 4) Preparation of hydrogen peroxide pre-cleaning solution: Add 500ml of 30% hydrogen peroxide into 50L of deionized water, add 100g of alkali, and stir to mix Uniformly prepare hydrogen peroxide pre-cleaning solution; 5) Preparation of mixed acid solution: HF and HCl are prepared with a molar ratio of 1:2 to prepare a mixed acid concentration of 1.5moL / L; 6) Put th...

Embodiment 2

[0033]1) Additive preparation: With 1L deionized water as solvent, add 15g of quercetin rhamnosyl, 2g of gallic acid, 0.04g of potassium lauryl phosphate, 0.3g of sodium carbonate, 0.1g of sodium thiosulfate, 0.4g malic acid, the above substances are fully stirred and mixed; 2) Preparation of texturing solution: add 750g sodium hydroxide to 50L deionized water, add 250ml of additives and stir well to obtain an alkaline texturing solution; 3) Silicon chip cleaning solution Preparation: Add 125g of sodium hydroxide to 50L of deionized water, fully dissolve and stir evenly to prepare a cleaning solution for silicon wafers; 4) Preparation of hydrogen peroxide pre-cleaning solution: add 500ml of 30% hydrogen peroxide to 50L of deionized water, add 100g of alkali, stir and mix Uniformly prepare hydrogen peroxide pre-cleaning solution; 5) Preparation of mixed acid solution: HF and HCl are prepared with a molar ratio of 1:2 to prepare a mixed acid concentration of 1.5moL / L; 6) Put the ...

Embodiment 3

[0035] 1) Additive preparation: With 1L deionized water as solvent, add 15g dehydrobispressoyl glucoside, 4g syringic acid, 0.04g polyoxyethylene ether phosphate potassium salt, 0.5g sodium citrate, 0.2g sodium sulfite, 0.8 g oxalic acid, the above substances are fully stirred and mixed; 2) preparation of texturing solution: add 500g of sodium hydroxide in 50L of deionized water, add 250ml of additives and fully stir to obtain an alkaline texturing solution; 3) preparation of silicon chip cleaning solution: Add 150g of sodium hydroxide to 50L of deionized water, fully dissolve and stir evenly to prepare a cleaning solution for silicon wafers; 4) Preparation of hydrogen peroxide pre-cleaning solution: add 500ml of 30% hydrogen peroxide to 50L of deionized water, add 100g of alkali, stir and mix to prepare Obtain hydrogen peroxide pre-cleaning solution; 5) Preparation of mixed acid solution: HF and HCl are prepared with a molar ratio of 1:2 to prepare a mixed acid concentration o...

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Abstract

The invention discloses a monocrystalline silicon texturing additive for a weak rough polishing process and a use method. The monocrystalline silicon texturing additive comprises a defoaming agent, an auxiliary nucleating agent, a surfactant, a pH regulator, a complexing agent, organic acid and deionized water. Compared with an existing texturing additive without a rough polishing texturing process, the monocrystalline silicon texturing additive disclosed by the invention is matched with a weak rough polishing process, so that the yield of monocrystalline silicon cells is effectively improved, the large-size flaking development of silicon wafers is promoted, and the manufacturing cost of the solar cells is reduced; and the additive has a large use window, is suitable for the process of reducing the weight of 0.03-0.10 g in the rough polishing process of the silicon wafer, and is high in operability. The surface of the silicon wafer after weak rough polishing is still flat, a better suede surface can be formed when the additive is used for texturing, and the light trapping effect of the silicon wafer is improved, so that lower reflectivity is obtained, and the photoelectric conversion efficiency of a solar cell is improved.

Description

technical field [0001] The invention belongs to the technical field of monocrystalline silicon cell production, and in particular relates to a monocrystalline silicon texturing additive used in a weak rough polishing process and a use method thereof. Background technique [0002] With the improvement of the level of science and technology, human beings continue to deepen their understanding of renewable energy, especially the development and utilization of solar energy is increasingly valued by people. Photovoltaic power generation is one of the important methods for direct utilization of solar energy. The silicon surface is textured to form pyramids by wet etching to reduce the surface reflectivity of the silicon wafer and improve the photoelectric conversion efficiency. [0003] Solar cells have high requirements on the surface cleanliness of silicon, because silicon is the most important material in solar photovoltaic modules. The earliest pre-cleaning of the surface of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10C30B29/06H01L31/18H01L31/0236
Inventor 彭丽陈心浩吴家阳王涛韩军常帅锋周浩
Owner 嘉兴市小辰光伏科技有限公司
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