Molecular glass photoresist of metallocene compound and preparation method thereof

Abstract

The invention discloses a molecular glass photoresist of a metallocene compound and a preparation method of the molecular glass photoresist, and belongs to the technical field of semiconductor microelectronic chemistry. The molecular glass photoresist contains molecular glass film-forming resin, a photoacid generator (PAG), an auxiliary agent and a solvent. The molecular glass film-forming resin is monomolecular resin which is shown as a formula (I) and takes a metallocene compound as a core and two cholic acid derivatives as branched chains. The molecular glass film-forming resin disclosed by the invention is single in molecular weight and high in glass transition temperature (Tg); the positive photoresist prepared by matching the film-forming resin with a photoacid generator (PAG) can be used in photolithographic processes of 248nm (KrF), 193nm (ArF), extreme ultraviolet (EUV), nanoimprint (NIL), electron beam (EBL) and the like. In addition, the core raw materials, namely the metallocene compound and the cholic acid derivative, adopted by the invention are all derived from homemade, so that the clamping problem of the semiconductor photoresist and the raw materials thereof can be thoroughly solved from the source.

Description

technical field [0001] The invention relates to a photoresist used in a VLSI chip, in particular to a photoresist using a single beam of deep ultraviolet (DUV) light as an exposure light source, and belongs to the technical field of semiconductor microelectronic chemistry. Background technique [0002] Photoresist, also known as photoresist, refers to an etching-resistant film material whose solubility changes under the irradiation or radiation of ultraviolet light, electron beam, ion beam, X-ray, etc. In recent years, with the trend of miniaturization, light weight and portability of electronic and electrical products, the integration of VLSI chips is getting higher and higher, and the wavelength of light sources for photolithography exposure of semiconductor chips is constantly shortening, from 365nm (i-line) Developed to 248nm (KrF), (ArF), 13nm (EUV). In order to improve the sensitivity of photoresists, the current mainstream KrF, ArF, and EUV photoresists all use chemi...

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Problems solved by technology

Usually, in order to meet the anti-etching standard, the resin structure usually contains macromolecule anti-etching groups with ester ring structure, such as adamantane compound, norbornane and other structures, but when rigid structural groups are introduced into the polymer, in During the development process, resin solubility problems are likely to occur, resulting in small residues in the exposure area and irregular jagged edges on the lines; and because the film-forming resin has a large relative molecular mass and a wide molecular weight distribution, high-precision lines are easy to collapse, increasing In addition, most of the photoresist monomer raw materials are controlled by chemical giants in Japan, Germany and the United States, so the use of imported monomers to synthesize photoresist cannot solve the bottleneck from the source question

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