3 results about "Quartz clock" patented technology

The application discloses a temperature control method and device of a semiconductor device, equipment and a storage medium, and relates to the technical field of temperature control, and comprises the following steps: based on the slit cavity observation band brightness of the edge infrared observation annular area of a rapid thermal processing furnace and the surface emissivity of a wafer, the equivalent radiation temperature of the slit cavity observation band brightness is calculated; the equivalent temperature of the inner edge of a quartz bell jar is solved; based on the equivalent radiation temperature and the equivalent temperature of the inner edge of the quartz bell jar, the net radiation incident heat power transmitted from the annular slit radiation cavity of the rapid thermal processing furnace to the wafer edge band of the wafer is calculated; and based on the net radiation incident heat power, the target lamp area power replacement vector of the rapid thermal processing furnace is solved. The application can improve the initiative and accuracy of wafer edge temperature control.

The application provides a crystal pulling method for improving the qualified rate of ultra-low resistance red phosphorus single crystal, and belongs to the technical field of ultra-low resistance crystal pulling methods. A CUSP magnetic field is turned on during doping and turned off after crystal pulling is completed. Meanwhile, the position of a hook-shaped magnetic field is controlled according to the position of a doped quartz bell jar. Then, during the constant-diameter process, the hook-shaped magnetic field is kept at a predetermined position below the silicon solution, and the magnetic field strength of the hook-shaped magnetic field is controlled. The argon flow, furnace pressure, crucible rotation speed, crystal rod rotation speed and crystal pulling speed are adjusted, so that the mass and heat transfer mechanism in the melt is changed from "uncontrollable strong convection" to "controllable weak convection / diffusion dominant" mode. The upward flow in the center region of the melt and the horizontal flow on the surface are weakened, the evaporation rate of phosphorus from the free liquid surface can be significantly reduced, a heavily doped red phosphorus crystal rod with Res less than or equal to 0.0001 ohm*cm can be pulled, the axial resistivity distribution of the pulled crystal rod is uniform, and the qualified rate of the crystal rod with Res less than or equal to 0.0001 ohm*cm is greater than or equal to 55%.

The application provides an epitaxial growth device and a temperature control method thereof, and belongs to the technical field of semiconductor manufacturing. The epitaxial growth device comprises: an upper quartz bell jar and a lower quartz bell jar, the upper quartz bell jar and the lower quartz bell jar are arranged to form a reaction chamber; a susceptor for placing a silicon wafer in the reaction chamber; a heating module in the reaction chamber, the heating module comprises an upper heating module arranged above the susceptor and a lower heating module arranged below the susceptor; a temperature measurement assembly for obtaining the temperature of the upper surface of the silicon wafer and the temperature of the susceptor; a power measurement assembly for obtaining the power of the heating module; and a control unit for judging whether to perform a cleaning step according to the temperature of the upper surface of the silicon wafer, the temperature of the susceptor and the power of the heating module, and cleaning the upper quartz bell jar and / or the lower quartz bell jar. The technical scheme of the application can control the temperature of epitaxial growth and ensure the quality of epitaxial products.