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Isotropic anthryl compound with oxygen atom substituents, preparation method and application

An isotropic, oxygen atom technology, applied in the field of anthracene-based organic semiconductor materials and their preparation, can solve the problems of poor photostability, cost and stability gap, etc., and achieve low cost, good morphology stability, high charge The effect of transmission performance

Inactive Publication Date: 2016-09-21
NANJING TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, pentacene (Pentacene) is a small molecule organic semiconductor material composed of five parallel benzene rings, and it is also the organic semiconductor material with the highest mobility reported so far, but its fatal shortcoming: poor photostability
Compared with inorganic materials, pentacene still has a gap in cost and stability

Method used

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  • Isotropic anthryl compound with oxygen atom substituents, preparation method and application
  • Isotropic anthryl compound with oxygen atom substituents, preparation method and application
  • Isotropic anthryl compound with oxygen atom substituents, preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] A heteroatom-substituted anthracene-based organic semiconductor material 2,6-bis(4-methoxybenzene)anthracene (named BOPAnt), its structural formula is:

[0020]

[0021] The method for preparing the organic semiconductor material DOBAnt includes the following steps:

[0022]

[0023] In a 250ml single-mouth reaction flask, add 3.36g 2,6-dibromoanthracene (10mmol), 150ml toluene, 3.80g methoxyphenyl borate (25mmol), 25ml, 2M sodium carbonate solution, 0.23g four (Triphenylphosphine) palladium (0.2 mmol), 2.7 g of trioctyl methyl ammonium chloride, nitrogen gas was passed through the reaction solution for 25 minutes, the reactor was closed, and the temperature was raised to 95° C. and refluxed for 24 hours to terminate the reaction. Wash with methanol, dilute acid solution, acetone and chloroform in sequence, and filter to obtain 2.95 g of yellow product (yield 75.64%), and the obtained product is BOPAnt.

[0024] Check with a thermogravimetric analyzer (TGA). The analysis cond...

Embodiment 2

[0028] Preparation of BOPAnt organic field effect transistor

[0029] Step 1: Silicon wafer cleaning

[0030] Prepare a number of 30mm×30mm silicon wafers with an inorganic insulating layer of silicon dioxide on one side, and wash them with deionized water, isopropanol, and acetone in order for 10 minutes, and add a mixed solution of hydrogen peroxide and concentrated sulfuric acid in a ratio of 3:7. Heat at 90°C for 30 minutes, and then clean the silicon wafer with deionized water. Then it was sonicated with isopropanol for 10 minutes and dried with nitrogen.

[0031] Step 2: Device preparation

[0032] The cleaned silicon wafer was taken, and the organic semiconductor material AlDOBAnt prepared in Example 1 was deposited by a vacuum thermal deposition method, the vacuum pressure was 6×10-4 Pa, the heat flow rate was 0.02, and the thickness of the organic semiconductor was about 50 nm. The drain-source electrode is deposited by a vacuum mask thermal evaporation method with a thickn...

Embodiment 3

[0035] Preparation of BOPAnt organic single crystal field effect transistor.

[0036] Step 1: Silicon wafer cleaning

[0037] Prepare a number of 30mm×30mm silicon wafers with an inorganic insulating layer of silicon dioxide on one side, and wash them with deionized water, isopropanol, and acetone in order for 10 minutes, and add a mixed solution of hydrogen peroxide and concentrated sulfuric acid in a ratio of 3:7 Heat at 90°C for 30 minutes, then clean the silicon wafer with deionized water. Then it was sonicated with isopropanol for 10 minutes and dried with nitrogen. Surface treatment of the substrate and use

[0038] Step 2: Single crystal growth and device preparation on the substrate

[0039] Use vapor phase physical method (PVT) for single crystal growth. Place the cleaned silicon wafer in the crystal growth zone of a multi-temperature tube furnace, place the material in the material sublimation zone, set the temperature in the sublimation zone to 330 degrees Celsius, and cr...

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Abstract

The invention relates to an isotropic anthryl compound with oxygen atom substituents, a preparation method and application. The anthryl semiconductor material with oxygen atom substitutions has a following structural formula. The material has good thermal stability and excellent carrier transport efficiency, is isotropic and is widely applicable to organic electroluminescent devices and organic field-effect transistor parts, and performance uniformity of batch-produced devices is greatly improved; the preparation method of the material is simple, and the material is applicable to industrial production.

Description

Technical field [0001] The invention relates to the field of optoelectronic materials, in particular to an anthracene-based organic semiconductor material substituted with isotropic oxygen atoms, and a preparation method and application thereof. Background technique [0002] With the rapid development of the information age, organic electronic devices have attracted more and more attention due to their low cost, high adaptability and easy processing characteristics. As the most basic element of electronic circuits, organic field-effect transistors have become a hot spot of current research due to their wide range of material sources, low cost, low temperature processing, compatibility with flexible substrates, and suitability for mass production. It has great potential application value in all organic active displays, large-scale and ultra-large-scale integrated circuit components, organic lasers, sensors, etc. [0003] Materials are the foundation and core of organic electronic d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07C43/205C07C41/30C09K11/06H01L51/54H01L51/30
CPCC09K11/06C07C17/357C07C25/22C07C41/30C07C43/205C09K2211/1007C09K2211/1011H10K85/615H10K10/46H10K50/16H10K50/11
Inventor 孟鸿闫丽佳黄维
Owner NANJING TECH UNIV
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