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A method for fabricating non-destructive micro-nano structures for micro-led applications

A technology of micro-nano structure and LED epitaxial wafer, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems affecting the I-V characteristics and luminous performance of micro-LEDs, ion damage, etc., to improve device performance, improve performance, Realize the effect of mass production

Active Publication Date: 2020-07-28
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the process of making LEDs, the continuous bombardment of plasma will cause ion damage to the etched material, which directly affects the I-V characteristics and luminous performance of micro-LEDs.

Method used

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  • A method for fabricating non-destructive micro-nano structures for micro-led applications
  • A method for fabricating non-destructive micro-nano structures for micro-led applications
  • A method for fabricating non-destructive micro-nano structures for micro-led applications

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Experimental program
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Effect test

Embodiment 1

[0062] In this embodiment, the nitride semiconductor epitaxial wafer adopts a GaN epitaxial wafer; the material of the mask layer is silicon nitride; the pattern of the nanostructure adopts a periodic columnar two-dimensional lattice, and the pattern transfer method adopts electron beam exposure; The etching process is carried out in an ultra-high vacuum chamber, and the thermal etching process is monitored in situ by a reflective high-energy electron diffractometer RHEED.

[0063] The method for preparing a GaN site-controllable nanostructure without etching damage in this embodiment includes the following steps:

[0064] 1) Select gallium nitride epitaxial wafers based on sapphire:

[0065] The decomposition rate of wurtzite GaN along the [0001] direction is faster than that along the and The decomposition rate of the direction, choose (0001) plane GaN as the substrate, so that and The direction is in the substrate plane, which is conducive to thermal decomposition t...

Embodiment 2

[0080] In this embodiment, there is no etching damage to the microcavity LED of the whispering gallery, such as Figure 6 As shown, first grow In(Ga) / GaN multi-quantum well LED structure 2-2 on sapphire substrate 1-1 by MOCVD or MBE, and then epitaxially 3um Al(Ga)N layer 2-3 on the LED structure, and then A silicon nitride mask 2-4 is deposited for pyrolytic etching, and finally a negative-tone UV photoresist is spin-coated 2-5.

[0081]The preparation method of the whispering gallery microcavity LED without etching damage in this embodiment includes the following steps:

[0082] 1) Preparation of LED structure samples:

[0083] Use MOCVD or MBE method to epitaxially GaN, InGaN / GaN multi-quantum well, and GaN cap layer on the sapphire substrate in sequence, and adjust the In composition of the multi-quantum well layer InGaN well layer and the thickness of the GaN barrier layer according to the light emission wavelength.

[0084] 2) Epitaxial whispering gallery layer and sil...

Embodiment 3

[0097] In this embodiment, a non-destructive preparation method for GaN-based micro-LEDs is provided, including the following steps:

[0098] 1) Preparation of high-quality GaN-based LED epitaxial wafers:

[0099] Such as Figure 8 As shown, firstly, N-type GaN epitaxy 3-2, InGaN / GaN multi-quantum well layer 3-3, and P-type GaN layer 3-4 are sequentially grown on a sapphire substrate 1-1 by using MOCVD or MBE method.

[0100] 2) Then, the metal layer 3-5 and the silicon nitride mask layer 3-6 are deposited by electron beam evaporation technology, and finally the negative UV photoresist 3-7 is spin-coated.

[0101] 3): According to the micro-LED mesa array requirements, design the exposure layout.

[0102] 4) Transfer the designed layout to the deposited SiN mask layer by using ultraviolet lithography technology, spin-coat negative ultraviolet photoresist, and use the residual photoresist as a mask after developing and fixing.

[0103] 5) Using plasma dry etching technology ...

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Abstract

The invention discloses a preparation method of a lossless micro-nano structure for micro-LED application. Transfer and preparation of micron-scale or nano-scale patterns are achieved through the electron beam lithography, and the method is high in flexibility and suitable for preparation of various micron-nano device structures; the reduction effect of introduction of plasma etching damage on theradiation recombination efficiency of the material is avoided, and the performance of the photoelectric device is further improved; compared with the traditional semiconductor etching process, the lattice selective thermochemical etching method has the advantages that the side wall of the obtained micron-nano structure with controllable sites has high steepness and smoothness and is not limited by the etching process, and the nano structure with controllable sites of different polarity surfaces can be obtained; a thermo-chemical etching process is used for preparing the micro-LED, no etchingdamage is introduced, and the performance of the device is improved; meanwhile, the existing process is adopted, and batch production can be achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, in particular to a method for preparing a non-destructive micro-nano structure for micro-LED applications. Background technique [0002] Low-dimensional semiconductor materials, including zero-dimensional quantum dots and one-dimensional nanowires and related nanostructures, have high crystal quality, excellent optical and electrical properties, and are widely used, such as high-efficiency light-emitting devices, micro-electromechanical systems MEMS sensors, single electron memories, and single photon emitting devices. With the development and application of wide bandgap semiconductor materials, a new generation of green and environmentally friendly solid-state lighting source GaN-based white light LEDs has attracted more and more attention from the technology and industry circles. With the development of semiconductor manufacturing industry, micron light-emitting diodes (m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
CPCH01L33/005
Inventor 王新强李铎沈波王平孙萧萧盛博文李沫张健
Owner PEKING UNIV