Hexagonal boron nitride thick film based on ion beam sputtering deposition, preparation method and application

Abstract

The invention relates to the field of thin film materials and semiconductor materials, and provides a hexagonal boron nitride thick film based on ion beam sputtering deposition, a preparation method and application. According to the preparation method, the large-area high-quality hexagonal boron nitride thick film is prepared on the surface of a substrate through adopting a method of combining double-ion-beam sputtering deposition with ion beam cleaning, so that the defect that a toxic and flammable precursor is generally used when the hexagonal boron nitride film is prepared through a chemical vapor deposition method is overcome, the problem that the top end of the thick film is cracked, and the adhesion to the substrate is not good due to the fact that the stress is too large when the hexagonal boron nitride thick film is prepared in the prior art is solved, a substrate transition layer and a nitride buffer layer such as catalytic metal / alloy are not used, and parameters of ion beamsputtering deposition are controlled, so that the prepared hexagonal boron nitride thick film has the characteristics that the stability is obviously improved, the structure is more ordered, the impurity content is extremely low, the insulativity is good, and the film thickness can reach 1 um; and the prepared hexagonal boron nitride thick film can be applied to insulating layers, protective layers, dielectric layers, heat dissipation layers and the like in electronic and optoelectronic devices.

Description

technical field [0001] The invention relates to the fields of thin film materials and semiconductor materials, in particular to a hexagonal boron nitride thick film deposited based on ion beam sputtering, its preparation method and application. Background technique [0002] As an extreme electronic material, boron nitride is a perfect and complementary to traditional wide bandgap semiconductor materials such as GaN and SiC. Hexagonal boron nitride (h-BN) is one of the important members of the boron nitride family. It has a layered structure unit similar to graphene, has an ultra-wide band gap (6.0eV), excellent chemical and thermal stability, High thermal conductivity, high breakdown field strength, high saturation drift velocity, low dielectric constant and many other characteristics are widely used in the fields of ultra-high voltage power electronic devices, radio frequency electron emitters, deep ultraviolet photodetectors, quantum communications and extreme environment ...

AI Technical Summary

Problems solved by technology

However, it is still a challenge to effectively control the thickness and uniformity of the hexagonal boron nitride film (CN111155065A, CN111139526A, CN107641789B)

In addition, as the film thickness increases, the continuous accumulation of stress during the preparation process will lead to film cracking, limited film thickness, resulting in poor adhesion of the material to the substrate, poor material quality, and poor device performance or even failure. And other issues

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