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Visible to mid-infrared band electrochromic thin film device with adjustable light performance and preparation method

A technology of electrochromic and thin-film devices, which is applied in the direction of originals for photomechanical processing, photographic process of patterned surfaces, and instruments. Control performance, reduce the effect of reflection

Active Publication Date: 2021-10-08
SHANGHAI JIAOTONG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, its color-changing band is limited to infrared radiation rate, and the device is opaque in the visible band, which limits its application in many applications that require visibility, such as screens, mirrors, smart windows, solar cells, etc.

Method used

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  • Visible to mid-infrared band electrochromic thin film device with adjustable light performance and preparation method
  • Visible to mid-infrared band electrochromic thin film device with adjustable light performance and preparation method

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preparation example Construction

[0040] A method for preparing an electrochromic thin film device with adjustable light performance in the visible to mid-infrared band, comprising the following steps:

[0041] S1: Select the substrate, the material of the substrate is a visible or infrared highly transparent inorganic material, such as: CaF 2 , BaF 2 , NaCl, KBr, etc. (0.3-25μm transmittance greater than 92%), or highly transparent inorganic materials for the required band, such as SiO 2 or ITO glass; and pre-treat the substrate;

[0042] The specific process of pretreatment can be determined according to specific materials, for example:

[0043] For deliquescent salt windows such as NaCl and KBr, the pre-treatment is preferably polishing and drying. The whole pre-treatment process needs to avoid the material from being damp and reducing its transmittance;

[0044] For corrosion-resistant windows such as silicon dioxide and conductive glass that are not easy to deliquesce, it is preferable to perform regul...

Embodiment 1

[0064] S1: Select high-temperature-resistant quartz glass (silicon dioxide sheet) with a thickness less than or equal to 1 mm and an area of ​​less than 6 inches as the base material; ultrasonically clean the silicon dioxide sheet in toluene for 20 minutes, and ultrasonically clean it in acetone for 15 minutes. Ultrasonic cleaning in ethanol for 20 minutes, and finally ultrasonic cleaning in deionized water for 20 minutes, rinse several times with flowing deionized water, and dry;

[0065] S2: The treated silicon dioxide wafer is subjected to plasma surface treatment for 10 minutes, and then electron beam evaporation is used to deposit 10nm of chromium and 60nm of gold successively. The role of chromium is to enhance the adhesion of the deposit on the glass sheet; Spin-coat positive photoresist with a thickness of 3 microns on the top, cover a mask plate with a grid array with a side width of 100 microns and a line width of 5 microns, and perform 10 seconds of UV exposure and 1...

Embodiment 2

[0071] S1: Select ITO conductive glass with a thickness less than or equal to 1 mm and an area less than 6 inches as the base material, and perform pretreatment on the ITO glass as in the ultrasonic cleaning step in step S1 of the above-mentioned embodiment 1;

[0072] S2: Simultaneous magnetron sputtering deposition of 350 nm WO on two pieces of ITO glass 3 , the sputtering power is 300W, the ratio of argon to oxygen is 30:2;

[0073] S3: Re-deposit 100nm Ta on one of them 2 o 5 , the sputtering power was 300W, the ratio of argon to oxygen was 30:3, and then the Ta 2 o 5 The ITO glass was annealed in an argon atmosphere, and the temperature was raised with the furnace at a rate of 1°C / min. The temperature was raised to 550°C, kept for 3 hours, cooled with the furnace, and the sample was connected to the electrochemical workstation through a three-electrode system. The ions were taken in several times by cyclic voltammetry, and the electrolyte was lithium perchlorate / propy...

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Abstract

The invention discloses an electrochromic thin film device with adjustable light performance in the visible to mid-infrared band and a preparation method thereof. The preparation method comprises the following steps: S1: select a substrate, and perform pretreatment on the substrate; S2: after the treatment Prepare a high transmittance conductive layer on the substrate; S3: deposit WO on the high transmittance conductive layer 3 layer as the color change layer, then in the WO 3 Continue to deposit Ta on the layer 2 o 5 As an electrolyte layer, and then annealed to obtain crystalline WO 3 ; S4: Continue to deposit metal oxide as an ion storage layer, and then repeat step S2 on the basis of metal oxide to obtain an electrochromic thin film device; wherein, if the substrate is a transparent conductive material, the step is directly carried out on the processed substrate S3. The electrochromic thin film device obtained by this method can regulate light performance from visible to infrared light, and can design components for different wavelength bands to obtain various discoloration and heat management performances.

Description

technical field [0001] The invention belongs to the field of intelligent thermal control thin films, and in particular relates to an electrochromic thin film device and a preparation method thereof whose light performance can be adjusted in the visible to mid-infrared band. Background technique [0002] Electrochromic materials are intelligent materials that can be adjusted in real time through the voltage of the external field. In the process of applying voltage, the optical properties will change continuously with the change of voltage. Usually, the low transparency state in the visible band is called coloring, and the high transparency for fading. Most electrochromic materials are dominated by transition metal oxides, which are divided into negative and positive, which refer to materials colored by negative and positive voltages, respectively. Due to the need for the supply of an electric field, the material itself cannot change color independently. The single-layer mate...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/1524G02F1/1506G02F1/1523G02F1/155G03F1/00C23C14/08C23C14/18C23C14/58C23C14/35
CPCC23C14/083C23C14/18C23C14/35C23C14/5806C23C14/5873G02F1/1508G02F1/1523G02F1/155G03F1/00G02F1/1524
Inventor 周涵钱珍莉唐道远徐建明刘向辉范同祥
Owner SHANGHAI JIAOTONG UNIV
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