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Film forming composition, resist composition, radiation-sensitive composition, method for producing amorphous film, resist pattern formation method, composition for forming lower layer film for lithography, method for producing lower layer film for lithography, and circuit pattern formation method

Composition and lower layer technology, applied to film forming composition, resist composition, radiation sensitive composition, manufacture of amorphous film, resist pattern formation, lower layer film forming composition for photolithography , In the field of the manufacture of the lower layer film for lithography and the formation of circuit patterns, it can solve the problems of the collapse of the resolution resist pattern and the difficulty in obtaining the resist pattern, etc., and achieve the effect of excellent heat resistance and/or etching resistance and/or optical properties

Pending Publication Date: 2021-08-24
MITSUBISHI GAS CHEM CO INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as the miniaturization of the resist pattern progresses, the problem of resolution and the problem of the collapse of the resist pattern after development gradually arise, so the thinning of the resist is expected.
Faced with such expectations, it is difficult to obtain a sufficient film thickness of the resist pattern in substrate processing only by thinning the resist

Method used

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  • Film forming composition, resist composition, radiation-sensitive composition, method for producing amorphous film, resist pattern formation method, composition for forming lower layer film for lithography, method for producing lower layer film for lithography, and circuit pattern formation method
  • Film forming composition, resist composition, radiation-sensitive composition, method for producing amorphous film, resist pattern formation method, composition for forming lower layer film for lithography, method for producing lower layer film for lithography, and circuit pattern formation method
  • Film forming composition, resist composition, radiation-sensitive composition, method for producing amorphous film, resist pattern formation method, composition for forming lower layer film for lithography, method for producing lower layer film for lithography, and circuit pattern formation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0532] Hereinafter, although an Example and a comparative example are shown, and this embodiment is demonstrated in more detail, this embodiment is not limited to these.

[0533] The analysis and evaluation methods of the polycyclic polyphenol resin in this embodiment are as follows.

[0534] The 1H-NMR measurement was carried out under the following conditions using "Advance 600II spectrometer" manufactured by Bruker Corporation.

[0535] Frequency: 400MHz

[0536] Solvent: d6-DMSO

[0537] Internal standard: TMS

[0538] Measuring temperature: 23°C

[0539]

[0540] The molecular weight of the polycyclic polyphenol resin was measured by LC-MS analysis using Acquity UPLC / MALDI-Synapt HDMS manufactured by Water Corporation.

[0541]

[0542] The polystyrene-equivalent weight average molecular weight (Mw) and number average molecular weight (Mn) were determined by gel permeation chromatography (GPC) analysis, and the degree of dispersion (Mw / Mn) was determined.

[0543...

Synthetic example 1

[0554] (Synthesis Example 1) Synthesis of R-DHN

[0555] 16.8 g (105 mmol) of 2,6-dihydroxynaphthalene (agent manufactured by Kanto Chemical Co., Ltd.) and 10.1 g of copper monobutyl phthalate ( 20 mmol), 30 mL of 1-butanol was added as a solvent, and the reaction solution was stirred at 110° C. for 6 hours to perform a reaction. After cooling, the precipitate was filtered, and the obtained crude product was dissolved in 100 mL of ethyl acetate. Next, 5 mL of hydrochloric acid was added, stirred at room temperature, and then neutralized with sodium bicarbonate. The ethyl acetate solution was concentrated, and 200 mL of methanol was added to precipitate the reaction product. After cooling to room temperature, it was filtered and separated. The obtained solid was dried to obtain 27.3 g of the target resin (R-DHN) having a structure represented by the following formula.

[0556] About the obtained resin, the polystyrene conversion molecular weight was measured by the said meth...

Synthetic example 1-2

[0560] (Synthesis Example 1-2) Synthesis of R-2,7DHN

[0561] 16.8 g (105 mmol) of 2,7-dihydroxynaphthalene (a reagent manufactured by Kanto Chemical Co., Ltd.) and 15.2 g of monobutyl phthalate copper ( 30 mmol), 40 mL of 1-butanol was added as a solvent, and the reaction solution was stirred at 110° C. for 6 hours to perform a reaction. After cooling, the precipitate was filtered, and the obtained crude product was dissolved in 100 mL of ethyl acetate. Next, 5 mL of hydrochloric acid was added, stirred at room temperature, and then neutralized with sodium bicarbonate. The ethyl acetate solution was concentrated, and 200 mL of methanol was added to precipitate the reaction product. After cooling to room temperature, it was filtered and separated. The obtained solid was dried to obtain 24.7 g of the target resin (R-2,7DHN) having a structure represented by the following formula.

[0562] About the obtained resin, the polystyrene conversion molecular weight was measured by t...

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Abstract

The present invention provides a film forming composition containing a polycyclic polyphenol resin having repeating units derived from at least one monomer selected from the group consisting of aromatic hydroxy compounds represented by formula (1A) and formula (1B), wherein the repeating units of the polycyclic polyphenol resin are linked by direct bonding between aromatic rings. (In formula (1A), X represents an oxygen atom, a sulfur atom, a single bond, or is not crosslinked, Y is a C1-60 2n-valent group or a single bond; here, when X is not crosslinked, Y is the 2n-valent group. Also, in formula (1B), A represents a benzene ring or a fused ring. Furthermore, in formula (1A) and formula (1B), R0 each independently is an optionally substituted C1-40 alkyl group, an optionally substituted C6-40 aryl group, an optionally substituted C2-40 alkenyl group, a C2-40 alkynyl group, an optionally substituted C1-40 alkoxy group, a halogen atom, a thiol group, or a hydroxyl group; here, at least one R0 is a hydroxyl group; m each independently is an integer of 1-9. n is an integer of 1-4, and p each independently is an integer of 0-3.).

Description

technical field [0001] The present invention relates to a composition for forming a film, a resist composition, a radiation-sensitive composition, a method for producing an amorphous film, a method for forming a resist pattern, a composition for forming an underlayer film for lithography, and an underlayer for lithography Film production method and circuit pattern formation method. Background technique [0002] In the manufacture of semiconductor devices, microfabrication is performed by photolithography using a photoresist material, and in recent years, further miniaturization based on pattern rules has been pursued along with higher integration and higher speed of LSIs. In photolithography using light exposure, which is a general-purpose technique today, the limit of the intrinsic resolution derived from the wavelength of the light source is approaching. [0003] The wavelength of the light source for lithography used for resist pattern formation was shortened from KrF ex...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G61/12G03F7/023G03F7/038G03F7/039G03F7/11G03F7/20H01L21/28H01L21/027
CPCG03F7/039G03F7/11H01L21/027H01L21/28C08L61/00G03F7/0752G03F7/094G03F7/0233G03F7/0045G03F7/325G03F7/322C08G16/0225C08L61/12C08G61/12C08L65/00C08L61/04G03F7/038G03F7/20H01L21/0332H01L21/0337H01L21/3081H01L21/3086G03F7/162G03F7/2006G03F7/38G03F7/40
Inventor 大松祯山本拓央堀内淳矢牧野岛高史越后雅敏
Owner MITSUBISHI GAS CHEM CO INC