Surface treatment method for molecular beam epitaxy InAs substrate

A molecular beam epitaxy and surface treatment technology, applied in chemical instruments and methods, polishing compositions containing abrasives, single crystal growth, etc., can solve the problems of difficult surface deoxidation, particle contamination, scratches, etc. , reduce pollution, avoid the effect of increasing

Active Publication Date: 2022-07-15
SUZHOU KUNYUAN OPTOELECTRONICS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] The present invention aims to provide a surface treatment method for molecular beam epitaxy InAs substrates, which can solve the problems of scratches, particle contamination an...

Method used

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  • Surface treatment method for molecular beam epitaxy InAs substrate
  • Surface treatment method for molecular beam epitaxy InAs substrate
  • Surface treatment method for molecular beam epitaxy InAs substrate

Examples

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Embodiment 1

[0059] Example 1 Surface Treatment of InAs Substrate for Molecular Beam Epitaxy

[0060] 1. Chemical mechanical polishing: use composite polishing pad, Gnad41 grinding and polishing machine for polishing, the polishing liquid is alkaline polishing liquid, the pressure is 310 g / cm 2 , the speed is 85 rpm, the polishing liquid is supplied by a roller pump non-circulating dripping (vacuum extrusion), and the flow rate is 300 mL / min;

[0061] Alkaline polishing liquid is composed of the following components by weight percentage (excluding organic acids): 10% colloidal silica, 11% oxidizing agent; 1% chelating agent and 78% deionized water; organic acid adjusts the pH value of the polishing liquid to 10 ;

[0062] The oxidant is composed of hydrogen peroxide, sodium hypochlorite and ammonium persulfate in a mass ratio of 1:1:0.5; the organic sodium salt is composed of sodium citrate, sodium tartrate and sodium benzenesulfonate in a mass ratio of 1:1:1 ;The organic acid is made up...

Embodiment 2

[0065] Example 2 Surface Treatment of InAs Substrate for Molecular Beam Epitaxy

[0066] 1. Chemical mechanical polishing: use composite polishing pad, Gnad41 grinding and polishing machine for polishing, the polishing liquid is alkaline polishing liquid, the pressure is 400 g / cm 2 , the speed is 95 rpm, and the polishing liquid is supplied by the non-circulating dripping (vacuum extrusion) method of the diaphragm pump, and the flow rate is 400 mL / min;

[0067] The alkaline polishing liquid is composed of the following components by weight percentage (excluding organic acids): 15% colloidal silica, 13% oxidizing agent; 3% chelating agent and 69% deionized water; the pH value of the polishing liquid adjusted by organic acid is 10 ;

[0068] The oxidant is composed of hydrogen peroxide, sodium hypochlorite and ammonium persulfate in a volume ratio of 1:1:0.5; the organic sodium salt is composed of sodium citrate, sodium tartrate and sodium benzenesulfonate in a mass ratio of 1:...

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Abstract

The invention belongs to the technical field of compound semiconductor wafer polishing, and particularly relates to a surface treatment method for a molecular beam epitaxy InAs substrate. The method comprises chemical mechanical polishing and surface vulcanization passivation treatment, and chemical mechanical polishing adopts an alkaline polishing solution containing colloidal silicon dioxide, a weakly alkaline oxidizing agent, organic sodium salt, a pH regulator and water. According to the method, the problems that scratches and particle pollution are easily generated when the InAs substrate which is a soft compound substrate is polished, and the surface is difficult to deoxidize during epitaxial growth are well solved, and the InAs substrate treated by the method can stably grow a high-quality superlattice infrared detector epitaxial wafer.

Description

technical field [0001] The invention belongs to the technical field of compound semiconductor wafer polishing, and in particular relates to a surface treatment method for molecular beam epitaxy InAs substrates. Background technique [0002] InAs (indium arsenide) is a direct transition type compound semiconductor material, and has broad and important application prospects in the fields of atmospheric detection, medical treatment, national defense and satellite communications; InAs crystal has high electron mobility and mobility ratio, low magnetic Resistive effect and small temperature coefficient of resistance, it is an ideal material for the manufacture of Hall devices and magnetoresistive devices. The electron mobility and electron saturation rate of InAs material are relatively high among the existing III-V compounds, and the room temperature electron mobility is 3.3×10 4 cm 2 / (V s), which is an ideal material for making Hall devices, and the peak electron drift velo...

Claims

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Application Information

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IPC IPC(8): C30B29/40C09G1/02C30B25/18
CPCC30B29/40C30B25/186C09G1/02
Inventor 陈意桥钱磊孙维国周千学傅祥良
Owner SUZHOU KUNYUAN OPTOELECTRONICS CO LTD
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