Method of forming semiconductor film and photovoltaic device including the film

a technology of photovoltaic devices and semiconductor films, applied in the direction of pv power plants, metal/alloy conductors, conductors, etc., can solve the problems of reducing using high-cost vacuum-based methods, and no reports of hydrazine-based deposition approaches for depositing homogeneous chalcogenide layers, etc., to avoid or reduce the need for enhancing additives, convenient elimination, and convenient us
US20110094557A1Inactive Publication Date: 2011-04-28ELPIS TECH INC

Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
ELPIS TECH INC
Publication Date
2011-04-28
Estimated Expiration
Not applicable · inactive patent

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Abstract

A method of depositing a kesterite film which includes a compound of the formula: Cu2−xZn1+ySn(S1−zSez)4+q, wherein 0≦x≦1; 0≦y≦1; 0≦z≦1; −1≦q≦1. The method includes contacting hydrazine, a source of Cu, and a source of at least one of S and Se forming solution A; contacting hydrazine, a source of Sn, a source of at least one of S and Se, and a source of Zn forming dispersion B; mixing solution A and dispersion B under conditions sufficient to form a dispersion which includes Zn-containing solid particles; applying the dispersion onto a substrate to form a thin layer of the dispersion on the substrate; and annealing at a temperature, pressure, and length of time sufficient to form the kesterite film. An annealing composition and a photovoltaic device including the kesterite film formed by the above method are also provided.
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Description

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to a liquid-based method for deposition of inorganic films having Cu, Zn, Sn, and at least one of S and Se, and more particularly to a method of deposition of kesterite-type Cu—Zn—Sn—(Se,S) materials and improved photovoltaic devices based on these films.

[0003] 2. Description of Related Art

[0004] Large-scale production of photovoltaic devices requires high-throughput technologies and abundant environmentally friendly materials. Thin-film chalcogenide-based solar cells provide a promising pathway to cost parity between photovoltaic and conventional energy sources.

[0005] Currently, only Cu(In,Ga)(S,Se)2 and CdTe technologies have reached commercial production and offer over 10 percent power conversion efficiency. These technologies generally employ (i) indium and tellurium, which are relatively rare elements in the earth's crust, or (ii) cadmium, which is a highly toxic heavy metal.

[0006] Copper-...

Claims

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