Brown electrochromic charge storage electrode and preparation method
An electrochromic and charge storage technology, applied in the direction of ion implantation plating, coating, instrument, etc., can solve the problems affecting the transmittance of the fading state of the device, the effect of affecting the coloring state of the device, and uneven thickness preparation, etc., to achieve High oxidation state transmittance, good product consistency, simple and efficient preparation method
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preparation example Construction
[0028] The preparation method of the inorganic brown electrochromic charge storage electrode is,
[0029] (1) Transparent substrate pretreatment
[0030] Use acetone, ethanol and pure water to ultrasonically clean the transparent base layer in turn, and then dry it in an oven after purging with nitrogen gas to remove oil and impurities on the surface;
[0031] (2) Preparation of transparent conductive layer by vacuum physical vapor deposition
[0032] The transparent conductive layer is prepared by magnetron sputtering or electron beam evaporation, and the square resistance of the transparent conductive layer is 5-30Ω / □;
[0033] (3) Vacuum physical vapor deposition electrochromic charge storage layer and subsequent heat treatment crystallization
[0034] The charge storage layer was prepared by magnetron sputtering or electron beam evaporation. The deposition atmosphere used was argon or argon-oxygen mixed gas, and the chamber deposition pressure range was set to 1×10 -2 ~...
Embodiment 1
[0042] (1) Use acetone, ethanol and pure water to ultrasonically clean the inorganic glass for 15 minutes, nitrogen purging and drying in an oven to remove oil and impurities on the surface, and place the clean and dry glass substrate in a vacuum chamber In the room, the deposition method is DC magnetron sputtering deposition, the target is ITO target, the target base distance is 9cm, and the vacuum pump is used to reduce the vacuum of the chamber to 1×10 -3 Pa, adjust the argon and oxygen gas flow meters to keep the chamber pressure at 1.0Pa, where the argon-oxygen ratio is 30 / 1, the substrate temperature is room temperature, the deposition power is 100W, the deposition rate is 50nm / min, and the deposition thickness is 300nm;
[0043] (2) Place the glass substrate with the deposited transparent conductive layer in a vacuum annealing furnace, anneal at 250°C for 30 minutes in an argon atmosphere of 1 Pa, and cool to room temperature with the furnace;
[0044] (3) The above ann...
Embodiment 2
[0048] (1) Use acetone, ethanol and pure water to ultrasonically clean the inorganic glass for 15 minutes, nitrogen purging and drying in an oven to remove oil and impurities on the surface, and place the clean and dry glass substrate in a vacuum chamber In the room, the deposition method is DC magnetron sputtering deposition, the target material is Al-doped ZnO (AZO) target, the distance between the target and the base is 9 cm, and the vacuum of the chamber is reduced to 1×10 -3 Pa, adjust the argon and oxygen gas flow meters to keep the chamber pressure at 0.8Pa, where the argon-oxygen ratio is 25 / 1, the substrate temperature is room temperature, the deposition power is 100W, the deposition rate is 40nm / min, and the deposition thickness is 100nm; Continue to use the ITO target to deposit the second ITO transparent conductive layer, the target base distance is 9cm, and use the vacuum pump to reduce the vacuum of the chamber to 1×10 -3 Pa, adjust the argon and oxygen gas flow ...
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