Microcrystalline nickel-phosphorus alloy chemical plating solution and preparation method thereof

A technology of nickel-phosphorus alloy and chemical plating solution, which is applied in the field of information materials, can solve the problems of chip stability and reliability, small contact between nickel-plated layer and silicon layer, adverse effects of subsequent welding, etc., and achieve silicon-based bonding force Good, flat deposition, and the effect of reducing the surface energy of the chip

Inactive Publication Date: 2018-12-07
SHANGHAI RES INST OF CHEM IND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, when the electroless plating solution commonly used in the market is used to electroless nickel-phosphorus alloy plating on the chip, there are micro-pores in the coating, especially on the phosphorus-expanded surface, which has more pores, which has an adverse effect on the subsequent welding.
On the one hand, the contact between the nickel pla

Method used

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  • Microcrystalline nickel-phosphorus alloy chemical plating solution and preparation method thereof
  • Microcrystalline nickel-phosphorus alloy chemical plating solution and preparation method thereof
  • Microcrystalline nickel-phosphorus alloy chemical plating solution and preparation method thereof

Examples

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Effect test

Embodiment 1

[0036] 120 parts of nickel chloride, 100 parts of ammonium chloride, 200 parts of citric acid, 30 grams of EDTA disodium salt, 50 parts of ammonia water, 30 parts of sodium hypophosphite, dissolved in deionized water, and then added low-foaming fluorocarbon surface active 0.05 part, 1 part of potassium iodide stabilizer, 0.05 part of thiourea, add deionized water to make 4 liters, and ultrafine filter to make working solution. Take 60 pieces of 3-inch monocrystalline silicon wafers and put them on the support (floor) of polytetrafluoroethylene, after activation and hydrolysis, put them into the electroless nickel plating working solution, the temperature is controlled at 85±5°C, and the nickel plating time is 100 seconds . After testing, the thickness of the coating is 0.70μm, the bonding force between the 1A chip and the pad is 38.0N, the coating is microcrystalline, and the number of holes per unit area on both sides of the chip is 0.5 / cm 2 .

[0037] figure 1 and figur...

Embodiment 2

[0039] 60 parts of nickel sulfate, 80 parts of ammonium chloride, 90 parts of ammonium hydrogen citrate, 70 parts of ammonia water, 100 parts of sodium hypophosphite, dissolved in deionized water, then added 3 parts of alkyl diphenyl ether sulfonate, stable Add 0.05 parts of thiourea, 1 part of succinic acid, add deionized water to make 4 liters, and filter it into a working solution; take 60 3-inch single-crystal silicon wafers and put them on the support (floor) of polytetrafluoroethylene , after activation and hydrolysis, put it into the electroless nickel plating working solution, the temperature is controlled at 85±5°C, and the nickel plating time is 100 seconds. After testing, the thickness of the coating is 0.43μm, the bonding force between the 1A chip and the pad is 35.0N, the coating is microcrystalline, and the number of holes per unit area on both sides of the chip is 0.6 / cm 2 .

[0040] image 3 and Figure 4 These are the SEM photos of the boron and phosphorus ...

Embodiment 3

[0042]100 parts of nickel sulfamate, 120 parts of ammonium chloride, 250 parts of triammonium citrate, 30 parts of ammonia water, 70 parts of sodium hypophosphite, dissolved in deionized water, and then added polyoxypropylene-polyoxyethylene block polyether 2 part, 0.04 part of stabilizer benzotriazole, add deionized water to make 4 liters, ultra-micro-filtered into working solution; get 60 3-inch monocrystalline silicon wafers and put them on the support (floor) of polytetrafluoroethylene , after activation and hydrolysis, put it into the electroless nickel plating working solution, the temperature is controlled at 85±5°C, and the nickel plating time is 100 seconds. After testing, the thickness of the coating is 1.12 μm, the bonding force between the 1A chip and the pad is 46N, the coating is microcrystalline, and the number of holes per unit area on both sides of the chip is 0.4 pcs / cm 2 .

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Abstract

The invention relates to a microcrystalline nickel-phosphorus alloy chemical plating solution and a preparation method thereof. The microcrystalline nickel-phosphorus alloy chemical plating solution is characterized by talking deionized water as a solvent and comprising the following raw materials of, by weight, 60-120 parts of nickel sources, 90-150 parts of pH value balancing agents, 30-100 parts of reducing agents, 90-250 parts of complexing agents, 0.05-3.0 parts of surfactants, 0.01-5.0 parts of stabilizers. The preparation method of the microcrystalline nickel-phosphorus alloy chemical plating solution comprises the following steps that firstly, the components such as nickel chloride, ammonium chloride and citric acid are metered by mass and poured into a dissolving reaction kettle with stirring; the deionized water is added, and stirring and dissolving are carried out; then sodium hypophosphite is added, and stirring and dissolving are carried out; and finally additives such asthe stabilizers and the surfactants are added. The microcrystalline nickel-phosphorus alloy chemical plating solution and the preparation method thereof are mainly applied to metallization of monocrystalline silicon and polycrystalline silicon chips. Compared with the prior art, the microcrystalline nickel-phosphorus alloy chemical plating solution and the preparation method thereof have the advantages that the plating speed is high, the binding force between coatings and silicon bases of the chips is good, the coatings are fine, and the number of pores per unit area is small.

Description

technical field [0001] The invention relates to an electroless nickel plating agent, in particular to a microcrystalline nickel-phosphorus alloy electroless plating solution and a preparation method thereof, belonging to the field of information materials. Background technique [0002] In the semiconductor industry in the field of information materials, the semiconductor material-single crystal silicon is doped into a p-n junction, and becomes a functional material for various purposes. To connect semiconductor materials with the outside world, semiconductor metallization is necessary first. Metallization has different methods, such as vapor deposition of metal nickel, aluminum, gold, etc., and target sputtering, but this method has vacuum film equipment, expensive target materials, and coating volume. Small, high-cost defects; and electroless nickel plating has the advantages of simple operation, large-scale mass production, and low cost, so electroless plating methods are ...

Claims

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Application Information

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IPC IPC(8): C23C18/36
CPCC23C18/36
Inventor 谢国庆凌钦才龚彦李晓雷李明朱琦翟金国陈国平陈震东
Owner SHANGHAI RES INST OF CHEM IND
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