The invention discloses a high-power aluminum
nitride ceramic substrate 100W-20dB attenuator, which comprises an aluminum
nitride substrate, a conductive layer is printed on the back of the aluminum
nitride substrate, and several resistors and silver are printed on the front of the aluminum nitride substrate. Paste wire, the
silver paste wire is connected to the
resistor to form an attenuation circuit, and the glass protective film is printed on the
resistor. The high-power aluminum nitride
ceramic substrate 100W-20dB attenuator increases the resistance area, increases the high and low temperature
impact resistance of the attenuator, and makes the product
performance index meet the requirements. At the same time, it avoids the high
temperature resistance quenching when
welding the lead wire at the output end, avoids the risk of damage due to resistance
quenching during
actual use, and improves the
circuit design so that the product can be applied to 3G networks.