The invention discloses a high-power aluminum 
nitride ceramic substrate 100W-20dB attenuator, which comprises an aluminum 
nitride substrate, a conductive layer is printed on the back of the aluminum 
nitride substrate, and several resistors and silver are printed on the front of the aluminum nitride substrate.  Paste wire, the 
silver paste wire is connected to the 
resistor to form an attenuation circuit, and the glass protective film is printed on the 
resistor.  The high-power aluminum nitride 
ceramic substrate 100W-20dB attenuator increases the resistance area, increases the high and low temperature 
impact resistance of the attenuator, and makes the product 
performance index meet the requirements.  At the same time, it avoids the high 
temperature resistance quenching when 
welding the lead wire at the output end, avoids the risk of damage due to resistance 
quenching during 
actual use, and improves the 
circuit design so that the product can be applied to 3G networks.