The application discloses a method for low-temperature interface dissociation and high-value material graded
recovery of decommissioned
crystalline silicon photovoltaic modules, comprising the following steps: S1, pretreatment; S2, opening treatment; S3, directional activation; S4, thermal auxiliary
softening; S5, flexible peeling; and S6, graded
recovery. The application adopts the
coupling technology of interface activation and low-temperature thermal auxiliary
softening, does not depend on high-temperature complete
pyrolysis, significantly reduces
energy consumption and
pollution release risk, carries out layered peeling first, and then carries out material graded
recovery, avoids glass,
silicon wafer and
metal mixing caused by direct crushing, can improve glass complete recovery rate,
silicon wafer recoverable rate and
silver copper recovery efficiency, integrates EVA detachment, material peeling,
silver copper silicon collaborative recovery and
pollution control into a complete process
system, the process flow can be modularly designed, is suitable for large photovoltaic base surrounding regionalization
processing and mobile pretreatment unit construction, and meets the needs of large-scale, low-
carbonization and resourceization
processing.