8 results about "Mimo detector" patented technology

The invention relates to the field of semiconductor devices, and particularly discloses a photoelectric heterogeneous integrated microwave emission chip and a preparation method thereof, the chip is composed of a GaN HEMT amplifier and an InP UTC type detector on a SiC substrate; the preparation method comprises the following steps: preparing an amplifier on a SiC epitaxial wafer; growing a UTC type detector epitaxial layer on the InP substrate, and preparing a mesa structure; bonding the sapphire slide and the detector wafer; the InP epitaxial wafer substrate is removed; transferring the detector to an amplifier wafer through metal bonding; removing the temporary sapphire slide; and the detector is in electric signal communication with the amplifier. Compared with a method of firstly transferring an InP epitaxial layer and then preparing a detector device, the method has the advantages that the adverse effect of an InP-based detector processing technology on an amplifier is avoided; and secondly, the InP-based detector prepared by the method has the characteristic that the N-type contact metal faces downwards, and the structure is beneficial to reducing the junction region temperature and enhancing the heat dissipation capability of the device.

The invention relates to the field of MIMO signal processing, and discloses an MIMO-oriented bit width quantization method, device, equipment and medium, and the method comprises the steps: obtaining a plurality of variables to be quantized, carrying out the quantization of the integer bit width and sign bit width of the variables, obtaining the initial population of the variables, and carrying out the iterative optimization of the initial population, in any iteration process, carrying out the quantization of the integer bit width and sign bit width of the variables, and carrying out the quantization of the integer bit width and sign bit width of the variables. The method comprises the steps of determining a reference individual in a current population, performing decimal bit width updating on other individuals based on the reference individual, performing decimal bit width updating on any individual after the decimal bit width updating based on the target function value difference between the individual and the other individual, and determining a final population after iterative optimization is completed. And determining a target individual in the final population, and quantizing the decimal bit widths of the variables based on the decimal bit width combination of the target individual. According to the technical scheme provided by the invention, the automatic and efficient distribution of the decimal bit width in the MIMO detector is realized, and the calculation complexity and the hardware overhead are reduced.

The utility model discloses an air suction type smoke detector with an intelligent maintenance reminding function, which relates to the field of smoke detectors and comprises a detector shell, an air suction pipeline, an air suction pump, a smoke detection module, a control module and a communication module. A main control board, a filter, a pressure sensor and a detector are arranged in the detector shell, an air inlet is formed in the top surface of the detector shell, one end of the air inlet is fixedly connected with an air suction pipeline, and the other end of the air suction pipeline is fixedly connected with an air suction pump. The equipment replacement cost is reduced, overall management is convenient, reminding information can be sent to terminal equipment of a manager through the wireless communication module, the manager can know the maintenance requirement of the equipment in time no matter where the manager is, unified management and scheduling of the equipment are facilitated, and the management efficiency is improved.

The utility model discloses a battery compartment detector shunting structure which is installed in a detector and comprises a shunting seat and an on-off piston, a wide flow channel and a narrow flow channel which are linearly communicated with each other are formed in the shunting seat, and an air outlet communicated with the middle section of the wide flow channel is formed in the top of the shunting seat. A first external interface and a second external interface which penetrate out of the detector are formed in the bottom of the shunting seat, the first external interface is correspondingly communicated with one end, close to the narrow flow channel, of the wide flow channel, and the second external interface is correspondingly communicated with one end, away from the wide flow channel, of the narrow flow channel; a sealing cover penetrating cylinder is installed in the wide flow channel, the sealing cover penetrating cylinder blocks the end, away from the narrow flow channel, of the wide flow channel, a positioning cylinder channel and a reset cylinder channel are sequentially formed in the sealing cover penetrating cylinder in the direction towards the narrow flow channel, and a plurality of through openings communicated with the air outlet are formed in the end, close to the positioning cylinder channel, of the reset cylinder channel; the on-off piston can advance and retreat relative to the sealing cover penetrating cylinder and is arranged in the wide flow channel, and the narrow flow channel or the reset cylinder channel is blocked along with advancing and retreating of the on-off piston. The multifunctional computer desk has more diversified functions.

This invention discloses a cerium-doped InP-based single-photon avalanche detector for space communication and its fabrication method. The detector's epitaxial structure, from bottom to top, includes a substrate, an N-type buffer layer, an absorption layer, a band transition layer, an N-type charge layer, an intrinsic multiplication layer, an intrinsic InP layer, and a cerium-doped P-type contact layer. The core innovation lies in the dual radiation-resistant design of the Ce-doped P-type contact layer and the Ce-doped modified stacked passivation film. The fabrication method involves MOCVD epitaxial growth, spin-coating source diffusion to prepare the P-type contact layer, ICP etching and wet repair, magnetron sputtering doping, and electrode fabrication. This invention utilizes Ce's unique electronic structure to suppress radiation-induced defects and combines this with an SACM structure to optimize the electric field distribution, achieving low dark count rate, high detection sensitivity, and excellent neutron radiation resistance. The process is compatible with existing semiconductor production lines and is suitable for wafer-level mass production, meeting the high-reliability single-photon detection requirements of aerospace missions such as space laser communication and quantum key distribution.

The invention belongs to the field of wireless communication, and particularly discloses a high-dimensional MIMO-OFDM (Multiple Input Multiple Output-Orthogonal Frequency Division Multiplexing) implementation method and system based on space diversity. At a sending end, an input binary sequence is subjected to symbol mapping through a high-dimensional signal constellation diagram, space-time coding is carried out on a mapped high-dimensional signal coordinate component, fast Fourier inversion is carried out on each space-time code word, signals are converted from a frequency domain to a time domain, cyclic prefixes are added, and a high-dimensional signal is obtained. Signals are transmitted to a wireless channel through different antennas. At a receiving end, the time domain signal of each receiving antenna is subjected to cyclic prefix removal, then Fourier transform is carried out, the time domain signal is converted into a frequency domain signal, and an MIMO detector adopts a maximum likelihood or minimum mean square error algorithm, and after space-time decoding and high-dimensional signal de-mapping are carried out, an originally sent binary sequence is recovered. According to the invention, the spectrum efficiency can be improved and the system reliability can be enhanced.

The invention relates to the technical field of communication, and discloses a variable quantization method for an MIMO detector and computer equipment, and the method comprises the steps: determining a target quantization variable and corresponding state information for each time step, and enabling the target quantization variable to belong to a to-be-quantized variable set; historical time sequence information of the time step is obtained, the historical time sequence information and the state information are processed by using a deep cycle intelligent agent to determine a target output result of the target quantization variable, and the deep cycle intelligent agent is constructed based on a deep cycle Q network; determining a target execution action of the target quantization variable according to the target output result, and updating a quantization parameter of the target quantization variable according to the target execution action; and determining a final quantization strategy of the to-be-quantized variable set based on the quantization parameter updating result of each time step. According to the technical scheme provided by the invention, the calculation complexity and the hardware resource consumption of the MIMO detector can be reduced.

The invention provides a visible-short wave infrared InGaAs detector with high quantum efficiency and a preparation method thereof, the visible-short wave infrared InGaAs detector comprises a special readout circuit chip and a photosensitive chip, and the photosensitive chip is composed of a P-type contact electrode region, a passivation layer, an InP cap layer P-type region, an InP cap layer N-type region, an In < 0.53 > Ga < 0.47 > As absorption layer, an N-InGaAsP contact and corrosion stop layer and an antireflection film layer from bottom to top in sequence. A traditional InGaAs detector epitaxial material structure is broken through, the ultra-thin N-InGaAsP layer (smaller than or equal to 20 nm) is adopted as the N-type contact layer and the corrosion stop layer, the material quality is ensured, meanwhile, the epitaxial material structure and the preparation technology of the detector are simplified, and the ultra-thin N-InGaAsP layer can effectively reduce invalid absorption of the N-type layer to visible light; the grid-shaped N-type contact region structure can further reduce invalid absorption of the N-type layer to the visible light wave band, the quantum efficiency of the InGaAs detector in the visible light wave band is improved to the maximum extent, and the detection capability imprisonment of a visible-short wave InGaAs detector is broken through.