Method for fixing noble metal nano particles on single-crystal silicon surface polymer brush
A nanoparticle and polymer brush technology, applied in the field of micro-nano material preparation, can solve the problems of low graft density, uneven grafting, difficulty in obtaining thick polymer brushes, etc., and achieve high graft polymerization density and controllability. fixed effect
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Embodiment 1
[0023] 1) Place the monocrystalline silicon wafer in a 10vol% hydrofluoric acid solution for 2 minutes to remove the silicon dioxide oxide layer on the surface of the monocrystalline silicon wafer to obtain a hydrogenated silicon wafer A;
[0024] 2) Adding 4-vinylbenzyl chloride dropwise on the surface of silicon wafer A, irradiating with ultraviolet light for 3 minutes, washing with acetone, and drying to obtain silicon wafer B containing atom transfer radical polymerization initiator groups on the surface;
[0025] 3) Add silicon wafer B to 15mL of acetone containing 50mmol of butyl acrylate, remove oxygen, add 0.01mmol of copper bromide, 0.5mmol of cuprous bromide and 1mmol of bipyridine, and carry out surface-induced atom transfer radical polymerization. for 50 o C, the reaction time is 12 hours, obtain the silicon chip C that the surface contains polybutylacrylate brush;
[0026] 4) Place silicon wafer C in a dichloromethane solution containing 10vol% trifluoroacetic ac...
Embodiment 2
[0029] 1) Same as step 1 in Example 1;
[0030] 2) Same as step 2 of Example 1;
[0031] 3) Add silicon chip B into 12mL of tetrahydrofuran containing 40mmol of butyl acrylate, remove oxygen, add 0.01mmol of copper bromide, 0.5mmol of cuprous bromide and 1mmol of pentamethyldiethylenetriamine to carry out surface-induced atom transfer Free radical polymerization, the reaction temperature is 60 o C, the reaction time is 24 hours, obtain the silicon chip C that the surface contains polybutylacrylate brush;
[0032] 4) Place silicon wafer C in a dichloromethane solution containing 10vol% trifluoroacetic acid, the molar ratio of trifluoroacetic acid to butyl acrylate is 4:1, stir at room temperature for 24 hours, and obtain polyacrylic acid on the surface of single crystal silicon The polymer brush, the thickness of the polymer brush is 18nm;
[0033] 5) Soak the polymer brush obtained in the previous step in 0.006mol / L nickel chloride solution for 1 hour, take it out and react...
Embodiment 3
[0035] 1) Same as step 1 in Example 1;
[0036] 2) Same as step 2 of Example 1;
[0037] 3) Add silicon wafer B to 14mL of acetone containing 45mmol of butyl methacrylate, remove oxygen, add 0.0096mmol of cupric chloride, 0.48mmol of cuprous chloride and 0.96mmol of pentamethyldiethylenetriamine, and perform surface Initiate atom transfer radical polymerization, the reaction temperature is 60 o C, the reaction time is 36 hours, obtain the silicon chip C that the surface contains polybutylmethacrylate brush;
[0038] 4) Place silicon wafer C in a dichloromethane solution containing 10vol% trifluoroacetic acid, the molar ratio of trifluoroacetic acid to butyl methacrylate is 4:1, stir at room temperature for 36 hours, and obtain A polymer brush of polymethacrylic acid, the thickness of the polymer brush is 21nm;
[0039] 5) Soak the polymer brush obtained in the previous step in 0.005mol / L silver nitrate solution for 1 hour, take it out and react in 0.1mol / L sodium borohydrid...
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