Method and apparatus for open-air coating by laser-induced chemical vapor deposition
a technology of open-air coating and chemical vapor deposition, which is applied in the field of open-air coating by laser-induced chemical vapor deposition, can solve the problems of carbon film oxidation or precursor gas burning, optical fiber can only be manufactured in finite lengths, and all thickness and mass measurements cannot be carried ou
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example 1
[0065]A bare fused silica optical fiber 104 with a diameter of 3 mm was cleansed with methanol and distilled water before the carbon coating process was started. A protective carbon coating 514 was applied to a bare silica quartz optical fiber 104 by the process as illustrated in FIGS. 1 & 5. The applied carbon layer was polycrystalline graphite with a grain size less than or equal to 100 angstroms. Additionally, the carbon film 514 had a thickness of 250 nm and an assumed constant mass density of 2.210 g cm−3.
[0066]The uncoated optical fiber 104 was secured in the v-groove clamp 550 which was mounted on a linear traverse mechanism attached to a gear rack 551 as illustrated in FIG. 5. The v-groove clamp 550 was driven across the linear traverse mechanism using a rack and pinion system. The rack and pinion system comprised the gear rack 551, a machined nylon 14½ degree pressure angle spur gear 552, and an electric motor. The spur gear 552 attached to the shaft of the electric motor 5...
example 2
[0073]The carbon layer application in a second preferred embodiment is carried out in the same way as that in the first preferred embodiment, except in the following aspects. The beam 107 from the 25-W continuous monochromatic laser 111 is split into three beams instead of four as depicted in FIG. 11. The hydrocarbon gas blown onto the heated deposition site 721 is butane with the same purity as the propane used in the first preferred embodiment. The initial preset temperature at the deposition site is between 1375 and 1500 K. The inner compartment 115 of the base 113 is not centered within the base 113. While not centered in the base 113, the inner compartment 113 is still axially surrounded by the outer compartment 116.
example 3
[0074]A hermetically sealing silicon carbide layer 514 is applied to a microchip assembly 1360 comprising a superconductor microchip 1363 pressed between a first silicon wafer 1361 and a second silicon wafer 1362, by the process as illustrated in FIGS. 1 and 10. The top surface of the base 113 has a central nozzle 105 and an outer nozzle 102 with diameters of 4.2 and 52.3 mm respectively. The outer nozzle 102 expels argon gas, and the central nozzle 105 expels trimethylsilane.
[0075]The microchip assembly 1360 is secured on the top surface of the base 1013 within the stream of trimethylsilane gas emanating from the central nozzle 1005. The microchip assembly 1360 is oriented such that the microchip 1363 is perpendicular to the surface of the base 113 containing the central nozzle 105 and the outer nozzle 102. A 25 Watt continuous carbon dioxide laser 111 operating at a wavelength of 10.6 μm is focused on the seam between the first silicon wafer 1361 and the second silicon wafer 1362 ...
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