Minisize solid silicon needle array chip and its preparation method and use
A needle array, solid technology, applied in the direction of microneedles, needles, other medical devices, etc.
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Embodiment 1
[0084] Embodiment 1: the making of tapered micro-silicon needle
[0085] Basic process flow: Single-sided polishing of single crystal silicon wafer → growth of a layer of SiO 2 →Deposit metal film→Glue coating→Photolithography to obtain solid microneedle pattern→Reactive ion etching (RIE) removes metal film and SiO not protected by photoresist 2 Partial→anisotropic deep reactive ion etching (DRIE) to obtain microcylindrical arrays→wet etching to obtain solid microneedles.
[0086] Single-sided polished single crystal silicon type, 500 microns thick as raw material. The monocrystalline silicon was first cleaned with a cleaning solution containing 5 parts of deionized water, 1 part of 30wt% hydrogen peroxide and 1 part of 30wt% ammonia water at a temperature close to 80 degrees, and then dried at 150 degrees for 10 minutes. A silicon dioxide layer with a thickness of about 1 micron is grown on both sides of the single crystal silicon type through thermal oxidation at 900-11...
Embodiment 2
[0087] Embodiment 2: the making of nail type miniature solid silicon needle
[0088] Single-sided polished single crystal silicon type, 500 microns thick as raw material. The monocrystalline silicon was first cleaned with a cleaning solution containing 5 parts of deionized water, 1 part of 30wt% hydrogen peroxide and 1 part of 30wt% ammonia water at a temperature close to 80 degrees, and then dried at 150 degrees for 10 minutes. A silicon dioxide layer with a thickness of about 1.5 microns is grown and formed on the surface of single crystal silicon through high temperature thermal oxidation at 900-1100 ° C; a uniform layer of 1-2 microns is coated on the silicon dioxide film by the spin coating method Thick Shipley 1818 photoresist, pre-baked (soft baked) at 90 degrees for 5 minutes, formed a 80×80 array in a unit of 1 square centimeter, with a diameter of 100 microns and a solid circle mask with a pitch of 200 microns film (quartz glass is used in the semiconductor standa...
Embodiment 3
[0089] Embodiment 3: the making of tapered micro-silicon needle
[0090] Basic process flow: Double-sided polishing of single crystal silicon wafer → growth of a layer of SiO 2 →Deposit metal film→Glue coating→Photolithography to obtain solid microneedle pattern→Hydrochloric acid solution and a mixture of ammonium fluoride and hydrofluoric acid to remove the metal film and SiO not protected by photoresist 2 Partial→anisotropic deep reactive ion etching (DRIE) to obtain microcylindrical arrays→wet etching to obtain solid microneedles.
[0091] Double-sided polished single crystal silicon type, 500 microns thick as raw material. The single crystal silicon is first cleaned with a cleaning solution containing 5 parts of deionized water, 1 part of 30wt% hydrogen peroxide and 1 part of 30wt% ammonia water at a temperature close to 80 degrees, and then dried at 120 degrees for 10 minutes. A silicon dioxide layer with a thickness of about 1 micron is grown on both sides of the sin...
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