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PMN-pt piezoelectric single crystal thin film heterostructure of metal acoustic wave reflection layer and preparation method and application thereof
Pending
CN122396207A
Indium
Single crystal
The application belongs to the technical field of piezoelectric thin film hetero-integration, and particularly relates to a PMN-PT piezoelectric
single crystal
thin film heterostructure with a
metal
acoustic wave
reflection layer, a preparation method and application thereof. The PMN-PT piezoelectric
single crystal
thin film heterostructure comprises a
silicon
substrate, a
silicon
dioxide insulating layer, a high
acoustic impedance
metal
intermediate layer and a
lead magnesium niobate
piezoelectric
single crystal
thin film layer. The
lead magnesium niobate
piezoelectric single
crystal
thin film layer is a lead in niobate-
lead magnesium niobate
-
lead titanate
single
crystal
thin film or a lead
magnesium
niobate-
lead titanate
single
crystal
thin film. Compared with the prior art, the PMN-PT piezoelectric single crystal thin film heterostructure can highly localize
acoustic wave
energy in the piezoelectric single crystal thin film, significantly suppress
acoustic wave
energy leakage
to the substrate, and solve the acoustic leakage, vertical
electric field
loss and thermal stress mismatch
bottleneck
of the conventional piezoelectric hetero-integration technology.
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Owner:
XI AN JIAOTONG UNIV
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SILICONE DIOXIDE
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Acoustic impedance
Silicon
Piezoelectric thin films