The invention provides a method for preparing a grid
electrode of a
radio frequency GaN HEMT device, and the method comprises the steps: providing a
semiconductor structure which comprises a substrate, a buffer layer, a GaN channel layer, an AlN
insertion layer, an AlGaN
barrier layer, a first
dielectric layer, a source
electrode, a drain
electrode and a second
dielectric layer from the bottom to the top; a thick
dielectric layer is deposited on the second
dielectric layer, and planarization
processing is carried out on the thick
dielectric layer; forming an anti-reflection
coating and a
photoresist layer on the surface of the thick
dielectric layer, and patterning the
photoresist layer to form a grid opening area; sequentially
etching the thick dielectric layer, the second dielectric layer and the first dielectric layer to form a gate groove; removing the thick dielectric layer; and depositing gate
metal in the gate groove, and then forming a gate electrode through a stripping process. After the second dielectric layer is formed, the thick dielectric layer is grown on the surface of the second dielectric layer, the step difference is eliminated through CMP, grid photoetching and
etching are carried out, and finally the thick dielectric layer on the surface is removed, so that the grid
etching morphology is effectively improved, and strict control over the grid
line width is achieved.