Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

CZTSSe thin-film solar cell with upper conversion layer and manufacturing method of CZTSSe thin-film solar cell

A copper-zinc-tin-sulfur-selenide and solar cell technology, which is applied in the field of solar cells, can solve the problems of mismatch and low theoretical conversion rate, and achieve the effects of reducing preparation costs, making the preparation process green and environmentally friendly, and simple operation

Inactive Publication Date: 2015-03-25
WUHAN UNIV OF TECH
View PDF5 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the theoretical conversion rate of traditional CZTSSe thin-film batteries is low because most of the energy loss is caused by the mismatch between the spectrum that can be effectively used by solar cells and the standard solar spectrum. To improve the utilization of sunlight, the battery can be changed. Spectral response, setting the up-conversion layer to better match the response of the solar cell

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • CZTSSe thin-film solar cell with upper conversion layer and manufacturing method of CZTSSe thin-film solar cell
  • CZTSSe thin-film solar cell with upper conversion layer and manufacturing method of CZTSSe thin-film solar cell
  • CZTSSe thin-film solar cell with upper conversion layer and manufacturing method of CZTSSe thin-film solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] The preparation method of the copper-zinc-tin-sulfur-selenium thin-film solar cell with an up-conversion layer is as follows:

[0054] a) The molybdenum (Mo) back electrode 2 of the thin-film solar cell is deposited on the glass substrate 1 by the method of magnetron sputtering, and its thickness is about 400nm;

[0055] b) Up-conversion layer K of thin-film solar cells 2 YF 5 Film 3 is a fluoride film material prepared by a two-step method. The two-step method is to first prepare fluoride up-conversion nanocrystals by thermal injection, and then use the sol-gel method to pass the prepared nanocrystal ink on the Mo-plated surface. Deposit a layer of fluoride film on the substrate, the process steps are as follows:

[0056] b1) Weigh 0.39mmol of yttrium oxide (Y 2 o 3 ) and 4mmol of potassium bifluoride (KHF 2 ), put into the airtight three-necked flask of 50ml, and vacuumize 5min at normal temperature, then inject volume ratio and be 0.5, total solvent amount is the ...

Embodiment 2

[0075] The preparation method of the copper-zinc-tin-sulfur-selenium thin-film solar cell with an up-conversion layer is as follows:

[0076] Steps a)-b) are the same as in Example 1;

[0077] Preparation of photoelectric conversion layer CZTSe film

[0078] c1) First weigh 2mol of anhydrous cuprous chloride (CuCl), 1mol of anhydrous tin chloride (SnCl) 4 ) and 1mol of ammonium chloride (NHCl 4 ) is a reaction raw material, adding 1mol of 3-mercapto-1-propanesulfonate sodium (C 3 h 7 NaO 2 S 2 ) to promote Cu + and Sn 4+ Dissolve, add 3mol of selenium powder at the same time, put it into a 50ml three-necked flask, and vacuumize it at room temperature for 5min, then inject 10ml of oleic acid / oleylamine solvent system with a volume ratio of 1:2, and the solution immediately becomes dark. Yellow; at the same time, argon gas is introduced, and the temperature of the solution is raised to 300°C at the heating rate and stirring rate of 30°C / min and 400rpm / min respectively, a...

Embodiment 3

[0085] The preparation method of the copper-zinc-tin-sulfur-selenium thin-film solar cell with an up-conversion layer is as follows:

[0086] Steps a)-b) are the same as in Example 1;

[0087] Preparation of photoelectric conversion layer CZTS film

[0088] c1) First weigh 2mol of anhydrous cuprous chloride (CuCl), 1mol of anhydrous tin chloride (SnCl) 4 ) and 1mol of ammonium chloride (NHCl 4 ) is a reaction raw material, adding 1mol of 3-mercapto-1-propanesulfonate sodium (C 3 h 7 NaO 2 S 2 ) to promote Cu + and Sn 4+ Dissolve, add 3mol of sublimated sulfur into a 50ml three-neck flask to form a closed system, and vacuumize at room temperature for 5 minutes, close the vacuum valve, and then inject 10ml of oleic acid / oil with a volume ratio of 1:2 amine, the solution turns dark yellow; at the same time, argon gas is introduced, and the temperature is raised to 300°C at a heating rate of 30°C / min and a stirring rate of 400rpm / min, and is kept for 30min, finally forming...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a CZTSSe thin-film solar cell with an upper conversion layer and a manufacturing method of the CZTSSe thin-film solar cell. The CZTSSe thin-film solar cell comprises a substrate, a back electrode, a photovoltaic conversion layer, a buffer layer, a window layer, an antireflection layer and an upper electrode, wherein the back electrode is formed on the substrate and deposited according to a magnetron sputtering method, the photovoltaic conversion layer is a CZTSSe thin film, the buffer layer is a cadmium sulfide thin film and is formed on the photovoltaic conversion layer, the window layer is formed on the buffer layer, the antireflection layer is an MgF2 thin film and is formed on the window layer, the upper electrode is made of grid Ni-Al alloy and formed on the antireflection layer, and the upper conversion layer is arranged between the back electrode and the photovoltaic conversion layer. The CZTSSe thin-film solar cell with the upper conversion layer and the manufacturing method of the CZTSSe thin-film solar cell have the advantages that influences of solar heat radiation on the service life of the cell are avoided; according to the method, operation is simple and convenient, manufacturing cost is low, safety and environment friendliness are achieved, and toxicity is avoided; process steps are good in controllability, the upper conversion layer and the photovoltaic conversion layer thin film which are large in grain size, compact and good in photoelectric performance are easily made, and mass production is easy.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a copper-zinc-tin-sulfur-selenium thin-film solar cell with an up-conversion layer and a preparation method thereof. Background technique [0002] Solar energy is an inexhaustible renewable energy source for human beings, and it is also a clean energy source that does not produce any environmental pollution. Among the various utilization methods of solar energy, solar cells are the fastest-growing, most dynamic and the most attention-grabbing field, and are expected to solve the resource depletion and environmental pollution problems of traditional energy dominated by fossil energy such as oil, coal, and natural gas. effective way. [0003] The solar cells currently dominant in industrial production and in the market are the first generation of solar cells based on crystalline silicon (single crystal silicon and polycrystalline silicon), which have high photoelectric conversion effici...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01L31/18
CPCH01L31/0326H01L31/18Y02E10/50Y02P70/50
Inventor 夏冬林周斌刘欣李乾王友法熊真敏
Owner WUHAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com