Method for forming thin film

A thin film manufacturing method and thin film technology, which are applied in the field of thin film manufacturing, can solve problems such as aluminum and other metal corrosion, film quality degradation, and the problem of step coverage

Pending Publication Date: 2021-05-18
SOULBRAIN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, compared with the chemical vapor deposition (CVD, chemical vapor deposition) process that mainly uses the gas phase reaction, the atomic layer deposition (ALD, atomic layer deposition) process using the surface reaction is more used, but in achieving 100% step coverage (step coverage) is still a problem
[0005] In addition, titanium tetrachloride (TiCl 4 ), at this time, process by-products such as chlorides will remain in the manufactured film, which will induce the corrosion of metals such as aluminum, and cause the deterioration of film quality due to the formation of non-volatile by-products

Method used

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  • Method for forming thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1 to 7

[0108] Prepare the growth inhibitor for thin film formation and TiCl as the film precursor described in Table 1 below, respectively. 4 . The prepared growth inhibitor for thin film formation was filled in a tank, and supplied to a vaporizer heated to 150° C. at a flow rate of 0.05 g / min using a LMFC (Liquid Mass Flow Controller) at room temperature. After 3 seconds of injecting the growth inhibitor for thin film formation vaporized into the vapor phase in the evaporator into the deposition chamber loaded with the substrate, argon gas was supplied at 3000 sccm for 6 seconds and purged with argon gas. At this time, the pressure in the reaction chamber was controlled to 1.3 Torr. Then, the prepared TiCl 4 It was placed in another tank, and was supplied to another vaporizer heated to 150° C. at a flow rate of 0.05 g / min using LMFC (Liquid Mass Flow Controller) at normal temperature. TiCl vaporized into the vapor phase in the evaporator 4 After being put into the deposition cha...

experiment example

[0116] 1) Deposition evaluation

[0117] Referring to Table 2 below, Example 1 in which 2-chloro-2-methylbutane was used as a growth inhibitor for film formation was compared with Comparative Example 1 in which it was not included. As a result, the deposition rate is Compared with Comparative Example 1, the deposition rate was reduced by more than 55.5%. It could be confirmed that the remaining Examples 2 to 7 also had similar deposition rates as Example 1. In addition, it was confirmed that Comparative Examples 2 and 3, which did not use the growth inhibitor for thin film formation of the present invention but used pentane or cyclopentane, also had the same deposition rate as Comparative Example 1. At this time, a decrease in the deposition rate indicates a change in CVD deposition characteristics to ALD deposition characteristics, and thus can be used as an index of improvement in step coverage characteristics.

[0118] Table 2

[0119]

[0120] In addition, as sho...

Embodiment 1

[0136] In addition to using Tris(dimethylamino)cyclopentadienylzirconium (Tris(dimethylamino)cyclopentadienylzirconium; CpZr) instead of TiCl as the film precursor in Example 1 above 4 , and set the injection amount of the growth inhibitor for thin film formation to 12mg / sec, use ozone instead of ammonia gas as the reaction gas, and heat the substrate to be formed with a metal thin film to a temperature other than 280 to 340°C, in order to be consistent with the above implementation The same method of example 1 implements process, thus forms zirconium oxide film (ZrO 2 film).

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Abstract

The present invention relates to a method for manufacturing a thin film. The method comprises the steps of: i) adsorbing a growth inhibitor for thin film formation on a surface of a substrate; and ii) adsorbing a metal film precursor, a metal oxide film precursor, a metal nitride film precursor, or a silicon nitride film precursor on the surface of the substrate on which the growth inhibitor is adsorbed. The inhibitor for thin film formation is represented by a following formula 1, the metal is one or more types selected from a group consisting of tungsten, cobalt, chromium, aluminum, hafnium, vanadium, niobium, germanium, lanthanide element, actinium element, gallium, tantalum, zirconium, ruthenium, copper, titanium, nickel, iridium, and molybdenum. The formula 1: AnBmXo, wherein the A is carbon or silicon, B is hydrogen or alkyl having 1 to 3 carbon atoms, X is halogen, n is an integer of 1 to 15, o is an integer of one or more, and m is 0 to 2n+1.

Description

technical field [0001] The present invention relates to a thin film manufacturing method, and in more detail relates to appropriately reducing the growth rate of the thin film by suppressing side reactions, and preventing corrosion and deterioration by removing process by-products in the thin film, even when a thin film is formed on a substrate with a complex structure. A thin film manufacturing method that greatly improves the step coverage and the uniformity of the thickness of the thin film. Background technique [0002] The integration level of storage and non-storage semiconductor devices is increasing day by day. As their structures become more and more complex, step coverage becomes more and more important when depositing various thin films on substrates. [0003] The semiconductor thin film is formed of metal nitride, metal oxide, metal silicide, or the like. The metal nitride thin films include titanium nitride (TiN), tantalum nitride (TaN), zirconium nitride (ZrN)...

Claims

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Application Information

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IPC IPC(8): C23C16/455C23C16/54B29D7/01C23C16/30
CPCC23C16/545C23C16/45531C23C16/30B29D7/01C23C16/45534C23C16/34C23C16/345C23C14/046H01L21/32051H01L21/28562H01L21/76841H01L21/32H01L21/02189H01L21/0228C23C16/04C23C16/4408C23C16/45544H01L21/02172H01L21/02208H01L21/324H01L21/67017C23C16/405C23C16/303H01L21/28568
Inventor 延昌峰郑在善边惠兰宋泰浩金素贞李锡宗
Owner SOULBRAIN CO LTD
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