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2 results about "Kinetic curve" patented technology

Emulsified asphalt wheel sticking effect evaluation method, device and medium

ActiveCN121659617BImprove acquisition efficiencyReduce behavioral errorsGeometric CADDesign optimisation/simulationData setAnalogue computation
The application discloses an emulsified asphalt wheel sticking effect evaluation method, equipment and medium, and relates to the technical field of intelligent construction, which comprises the following steps: acquiring a test parameter table, inputting the test parameter table into a microfluidic chip tester for high-throughput testing, and outputting a demulsification kinetics curve and a basic adhesion force data set; combining demulsification process parameters in the demulsification kinetics curve with the basic adhesion force data set to generate a demulsification adhesion coupling data set, constructing a multi-physical field simulation model, and using the demulsification adhesion coupling data set for inversion and calibration to generate a calibrated digital twin model; acquiring construction environment data and inputting the construction environment data into the calibrated digital twin model for automatic multiple simulation calculation to predict wheel sticking risk indexes of different construction schemes; and integrating a construction scheme with the lowest wheel sticking risk index and a safe passing time window to generate an intelligent decision suggestion. The application inverses and calibrates the interfacial energy density through experimental data, and reduces the behavior error of the simulation model and the real material.
Owner:BEIJING MUNICIPAL ROAD & BRIDGE BUILDING MATERIALGRP +2

Method for improving gettering efficiency of crystalline silicon

The application discloses a method for improving the gettering efficiency of crystalline silicon, comprising the following steps: (1) removing the PSG layer after phosphorus diffusion, and testing the phosphorus concentration distribution, the phosphorus diffusion layer depth, the silicon wafer thickness and the metal impurity content ratio before and after gettering; (2) obtaining a first equation by using the continuity equation before and after metal impurity gettering and the existing form of metal impurities in the heavily doped phosphorus layer; (3) substituting each parameter into the first equation to obtain a value related to the segregation coefficient; (4) converting the phosphorus concentration distribution into the depth distribution of phosphorus diffusion with time, substituting into the first equation to obtain a gettering kinetics curve; (5) substituting the influence factor into the gettering kinetics curve to obtain a modified phosphorus gettering kinetics curve for predicting the phosphorus gettering efficiency; and (6) comparing the predicted phosphorus gettering efficiency with the gettering efficiency under the same thermal history in actual production to guide the process optimization of phosphorus gettering. By using the application, the gettering effect can be significantly improved.
Owner:ZHEJIANG UNIV