The invention discloses an engineered S-layer and a preparation method thereof, an HEMT sensor based on in-vitro self-
assembly of the engineered S-layer and a preparation method of the HEMT sensor and a
biomolecule detection
system, the engineered S-layer is formed by fusion expression of S-layer
protein based on recombination or redesign and a biological sensitive element, and the biological sensitive element is
protein or polypeptide; the HEMT sensor based on
engineering S-layer in-vitro self-
assembly comprises a
field effect transistor body and a grid sensitive region, the
field effect transistor body comprises a source
electrode and a drain
electrode which are arranged on the two sides respectively. The grid
electrode sensitive region is arranged between the source electrode and the drain electrode and comprises a
semiconductor material for forming a
heterojunction structure and a two-dimensional
protein nano array containing a biological sensitive element, and the two-dimensional protein nano array is formed by in-vitro self-
assembly of an engineered S-layer on the surface of the
semiconductor material. The
biomolecule detection
system comprises an HEMT sensor based on
engineering S-layer in-vitro self-assembly, an electrical detection
system and a
signal processing and analyzing system.