Nano light absorption composite material and preparation method thereof, and coated film preparation method

Abstract

The invention discloses a nano light absorption composite material and a preparation method thereof, and a coated film preparation method. The nano light absorption composite material comprises an organic main agent, an auxiliary agent and an inorganic functional nano material, wherein the organic main agent is selected from at least one of ethylene glycol, diethylene glycol monobutyl ether, diethylene glycol dibutyl ether, ethylene glycol monoethyl ether acetate, n-butyl acetate, terpilenol, n-butanol and methyl isobutyl ketone; the auxiliary agent includes at least one of dispersant, thickener, flatting agent and defoaming agent; and the inorganic functional nano material is selected from at least one of zinc oxide, zinc sulfide, indium oxide, titanium dioxide, MxO, gallium compounds, cadmium telluride, calcium titanate, perovskite, graphene and nano precious metal. According to the nano light absorption composite material disclosed by the invention, a multilayer efficient antireflection branched structure is constructed on a surface of a textured antireflection layer of a crystalline silicon solar cell piece, so that a solar cell has excellent overall properties such as high incident light absorption, improved short circuit current, good electrical property and the like.

Description

technical field [0001] The invention belongs to the technical field of solar battery slurry, and in particular relates to a nano light-absorbing composite material, a preparation method thereof, and a coating film preparation method. Background technique [0002] A solar cell is a device that converts sunlight into electrical energy through the photoelectric effect of the P-N junction. When light radiation of a suitable wavelength is incident on the P-N junction of the semiconductor, hole-electron pairs can be generated on the P-N junction of the semiconductor. Because there is an internal electric field in the P-N junction, that is, there is an internal potential difference, the electron pairs and holes move in opposite directions under the action of the internal potential difference. Finally, the electron pairs move to the negative terminal surface, and the holes move to the positive terminal surface. current delivered by an external circuit. It can be seen that the phot...

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Problems solved by technology

Among them, the mechanical groove method can obtain lower surface reflectivity, but this method is easy to cause mechanical damage to the surface of the silicon wafer, and the yield is relatively low, so it is rarely used in industry

The laser etching method is to make different groove patterns by laser. Both the stripe shape and the inverted pyramid shape can be realized by this method, and the reflectivity can be reduced to 8.3%, but the photoelectric efficiency and electrical performance of the finished battery are low. and cannot be effectively used in production

Reactive ion etching can be etched through different templates, generally dry etching, which can form a "black silicon" structure on the surface of the silicon wafer, and the reflectivity can be reduced to 4%-7.9%, but the equipment investment is expensive and the production The cost is very high

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