The present invention belongs to the field of
semiconductor detection, and specifically relates to a
solid-state Frisch grid device based on a
perovskite material, and a preparation method therefor. On the basis of inherent defects of existing virtual Frisch grid structures, provided in the present invention is a
solid-state Frisch grid device based on a
perovskite semiconductor material. The specific preparation method comprises: a direct growth method using a solution method, a mechanical fabrication method, etc. The weight
potential field distribution of a device is greatly limited at a grid location, which indicates that a grid can provide a good charge
shielding effect. Moreover, by comparing weight potential distributions at different grids, it can be seen that the
solid-state Frisch grid structure used in the present invention can realize a more uniform and near-
ideal weight potential field distribution by means of the adjustment of grid parameters. In addition, by means of further analyzing signals from an
anode, a
cathode and a gate in an individual event, more accurate information, such as
pulse rise time information and
radiation interaction location information, can be obtained.