54results about How to "Improve moisture resistance reliability" patented technology

A highly reliable semiconductor device with the improved humidity resistance reliability is disclosed. A disclosed epoxy resin composition for semiconductor encapsulation encapsulates, in the manufacture of the semiconductor device, a semiconductor element that is mounted on a lead frame having a die pad unit or a circuit substrate and a wire that connects an electrical junction disposed on the lead frame or circuit substrate and an electrode pad disposed on the semiconductor element. The epoxy resin composition includes an epoxy resin (A), a curing agent (B), and an inorganic filler (C). The epoxy resin (A) has a main peak area of 90% or more with respect to the total area of all peaks as measured by the gel permeation chromatography area method.

A monolithic ceramic electronic component includes a component body and outer electrodes. The component body includes a plurality of stacked ceramic layers and a plurality of inner electrodes which extend between the ceramic layers, which contain Ni, and which include exposed ends exposed on predetermined surfaces of the component body. The outer electrodes are electrically connected to the exposed ends of the inner electrodes and are formed on the predetermined surfaces of the component body by plating. The inner electrodes include Mg—Ni coexistence regions where Mg and Ni coexist.

Am organic electroluminescent device (100A) in an embodiment includes an element substrate including a plurality of organic electroluminescent elements (3) supported by a substrate; and a thin film encapsulation structure (10E) formed on the plurality of organic electroluminescent elements. The thin film encapsulation structure (10E) includes at least one complex stack body (10S) including a first inorganic barrier layer (12E), an organic barrier layer (14E) in contact with a top surface of the first inorganic barrier layer (12E) and including a plurality of solid portions discretely distributed, and a second inorganic barrier layer (16E) in contact with the top surface of the first inorganic barrier layer and a top surface of each of the plurality of solid portions of the organic barrier layer. The plurality of solid portions include a plurality of solid portions discretely provided and each having a recessed surface.

A thin film encapsulation structure included in an organic EL display apparatus includes a first inorganic barrier layer, an organic barrier layer in contact with the inorganic barrier layer, and a second inorganic barrier layer in contact with the organic barrier layer. The thin film encapsulation structure is formed on an active region and the active region side portion of a plurality of lead wires extending from the active region to a terminal. Each of the lead wires at least partially includes, at at least the lowermost portions of two side surfaces thereof in contact with the first inorganic barrier layer, a forward tapering side surface portion having a tapering angle smaller than 90 degrees in a cross-section parallel to a line width direction thereof. The thin film encapsulation structure includes an inorganic barrier layer joint portion in which the organic barrier layer is not present, and the first inorganic barrier layer and the second inorganic barrier layer are in direct contact with each other. On the respective portions, of the lead-out wires, having the forward tapered side surface portions, the inorganic barrier layer joint portion is formed and the active region is completely enclosed by the inorganic barrier layer joint portion.

A first outer electrode and first inner electrodes are supplied with an anode potential and a second outer electrode and second inner electrodes are supplied with a cathode potential when a monolithic ceramic capacitor is mounted and in use. The first outer electrode supplied with the anode potential has a thickness that is greater than a thickness of the second outer electrode supplied with the cathode potential.

The film-forming method according to an embodiment of the present invention includes: a step A for forming a photocurable resin liquid film on a substrate; a step B for vaporizing the photocurable resin in a first region on the substrate by selectively irradiating the first region with infrared rays or visible light having a wavelength that is longer than 550 nm; and a step C for obtaining a photocured resin film by curing the photocurable resin in the second region on the substrate, said second region including the first region, by irradiating, simultaneously with the step 3 or after performing the step 3, the second region with light, to which the photocurable resin is sensitive.

In a laminate type ceramic electronic component, when an external electrode is formed directly by plating onto a surface of a component main body, the plating film that is to serve as the external electrode may have a low fixing strength with respect to the component main body. In order to prevent this problem, an external electrode includes a first plating layer composed of a Ni-B plating film and is first formed such that a plating deposition deposited with the exposed ends of respective internal electrodes as starting points is grown on at least an end surface of a component main body. Then, a second plating layer composed of a Ni plating film containing substantially no B is formed on the first plating layer. Preferably, the B content of the Ni-B plating film constituting the first plating layer is about 0.1 wt % to about 6 wt %.