37results about How to "Increasing area" patented technology

In a semiconductor integrated circuit, there is provided a method for correcting crosstalk, which exerts an influence via coupling capacitance between wiring by the signal transitions between adjacent wiring, comprising the step of creating a candidate for buffer division, the step of creating a candidate for cell movement, or the step of victim net logic synthesis. Thereby, the crosstalk is corrected through the buffer division, the cell movement, or an increase of elements in number by logic decomposition, logic inversion and a change of fan-outs in number.

A converter is provided including: a first switch; an energy transmitting element for converting input energy into output energy according to the switching of the first switch; and a switching controller for detecting a time when a voltage between a first terminal and a second terminal of the first switch reaches a valley of a resonance waveform, and actuating the first switch corresponding to one of the detected valleys of the resonance waveform. The switching controller includes: a valley detector for changing the state of the output signal whenever a voltage between a first terminal and a second terminal of the first switch reaches a valley of the resonance waveform; and a PWM controller for actuating the first switch corresponding to an output signal of the valley detector.

A semiconductor resistor comprises a resistor body formed on a semiconductor substrate and first and second conductive terminals electrically connected to the resistor body at opposite ends thereof. The semiconductor resistor further includes at least first and second conductive paths between at least one of the first and second conductive terminals and the resistor body. The at least one conductive terminal is configured such that a resistance of the at least one conductive terminal between the at least first and second conductive paths is substantially matched to a resistance of the resistor body between the at least first and second conductive paths. In this manner, a current distribution between the at least first and second conductive paths is substantially matched.

A semiconductor memory device is disclosed. A block unit is divided into memory mats based on an internal address. In the case where the internal address is “1”, data are read in ascending order in accordance with a start address from the memory mat, while the internal address is incremented by an address conversion circuit thereby to select a 4-word block including the words next selected from the memory mat. At the same time, the internal address is incremented based on the start address, so that the period for reading each word included in the lowest order of 4-word block can be secured. In the process, the address next to be input can be decoded.

A self-calibration circuit of a nonvolatile memory includes a trimming data storage module, a sense amplifier module, a logic judgment module, and a scanning module. The nonvolatile memory circuit includes a memory cell array and the self-calibration circuit of the reading circuit of the nonvolatile memory. Without requiring an additional fuse or differential unit, the self-calibration circuit of a nonvolatile memory solves a deadlock problem securely and reliably without increasing circuit area and test cost, and be widely applied to OTP, MTP and EEPROM of various processes or various nonvolatile memories such as Flash EEPROM, MRAM, and FeRAM.

An router includes: a plurality of data storage sections configured to store input data; and an arbiter configured to compare the availability of at least one of the plurality of data storage sections with respect to data that is stored in that data storage section and that shares at least a part of a transmission path to the availability of another data storage section in an adjacent router with respect to that data that also shares at least that part of the transmission path, thereby determining, based on a result of the comparison, whether or not to output that data.

The present invention includes a resistive module, the resistive module including a plurality of nodes and at least a resistive component. The plurality of nodes include an input terminal and an output terminal of the resistive module; the resistive component is electronically connected between the input terminal and the output terminal of the resistive module to thereby make the input terminal and the output terminal have a specified resistive value therebetween. In addition, the resistive component is electrically connected between two nodes of a node pair among the nodes, and each resistive component has a corresponding predetermined resistive value.

A field device and method of operating high voltage semiconductor device applied with the same are provided. The field device includes a first well having a second conductive type and second well having a first conductive type both formed in the substrate (having the first conductive type) and extending down from a surface of the substrate, the second well adjacent to one side of the first well and the substrate is at the other side of the first well; a first doping region having the first conductive type and formed in the second well, the first doping region spaced apart from the first well; a conductive line electrically connected to the first doping region and across the first well region; and a conductive body insulatively positioned between the conductive line and the first well, and the conductive body correspondingly across the first well region.

A performance operator control apparatus adapted to a player piano comprises a motion control unit and a key drive unit comprising a plurality of key I / O control ICs in connection with keys of a keyboard, which are driven by solenoids so as to realize automatic performance, wherein upon detection of electrification abnormality of solenoids or temperature abnormality, LEDs are turned on to indicate the abnormality. The key I / O control ICs receive velocity signals regarding the solenoids so as to perform feedback controls on the keys in the automatic performance. In addition, unoccupied channels of the key I / O control ICs, which are not assigned to the keys and sensors, are used to input monitoring signals and to output inspection signals. Herein, the abnormality is determined based on the difference between pre-inspection data and post-inspection data, which are transferred using a loop connection channel of the key I / O control IC.

An image sensor comprises: a first semiconductor including a plurality of pixels two-dimensionally arranged, and a plurality of divided output lines, in a first direction, configured to read out pixel signals from the plurality of pixels in the first direction; and a second semiconductor including a plurality of signal processing units, corresponding to the plurality of output lines, respectively, configured to process the readout pixel signals, and a readout unit configured to read out the signals output from the signal processing units in a second direction, wherein the first semiconductor and the second semiconductor are stacked, and the plurality of output lines and the plurality of signal processing units are connected in correspondence with each other.

An optical element and associated methods for generating an optical element and apparatus comprising the optical element, wherein the optical element comprises a first surface (10), a second surface (15), and a side wall structure (25) between the first and second surfaces. The side wall structure has an internally reflecting profile such that optical radiation incident on the first surface at an angle less than or equal to an acceptance angle and then incident on the side wall structure is internally reflected to the second surface by the side wall structure. In a first cross section of the optical element, the side wall structure has a first internally reflecting profile and / or the first surface has a first cross sectional profile. In a second cross section that is rotated relative to the first cross section, the side wall structure has a second internally reflecting profile and / or the first surface has a second cross sectional profile, wherein the second internally reflecting profile of the side wall structure and / or the second cross sectional profile of the first surface is different from the first internally reflecting profile of the side wall structure and / or the first cross sectional profile of the first surface.

In order to suppress an off leak current of an off transistor for ESD protection, in an NMOS for ESD protection whose isolation region has a shallow trench structure, a drain region is placed apart from the shallow trench isolation region so as not to be in direct contact with the shallow trench isolation region in a region where the drain region of the NMOS transistor for ESD protection is adjacent to at least a gate electrode of the NMOS transistor for ESD protection.

The present disclosure is directed to a master-slave flip-flop memory circuit having a partial pass gate transistor at the input of the master latch. The partial pass gate transistor includes a pull-up clock enabled transistor for selectively coupling a high output of a test switch to the input of the master latch. The input of the master latch is also directly coupled to a low output of the test switch around the partial pass gate. In addition, a revised circuit layout is provided in which the master latch has three inverters. A first inverter is coupled to the input of the master latch. Second and third inverters are coupled to an output of the first inverter, with the second inverter having an output coupled to the input of the first inverter, and the third inverter having an output coupled to an output of the master latch. The first and second inverters are clock enabled, and the third inverter is reset enabled.