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35results about How to "Resist Composition" patented technology

Fluorine-containing cyclic compounds, fluorine-containing polymerizable monomers, fluorine-containing polymers resist compositions and patterning method

A fluorine-containing cyclic compound is represented by the formula 1: wherein each of R1, R2 and R3 independently represents a hydrogen, alkyl group, fluorine, fluoroalkyl group or hexafluorocarbinol group,wherein at least one of the hexafluorocarbinol groups may partly or totally be protected with a protecting group, andwherein the protecting group is (a) a straight-chain, branched or cyclic hydrocarbon group having a carbon atom number of 1-25 or (b) an aromatic hydrocarbon group and optionally contains a fluorine atom, oxygen atom, nitrogen atom or carbonyl bond.
Owner:CENT GLASS CO LTD

Novel compound, polymer, resist composition, and patterning process

There is disclosed a polymer containing at least a repeating unit represented by the following general formula (1), and the resist composition containing the polymer as a base resin, especially a chemically amplified resist composition. There can be provided a resist composition which has etching resistance in a practical use level, and is excellent in an adhesion property with a substrate and an affinity with a developer, and has a sensitivity and resolving power which is far excellent compared with a conventional one, wherein swelling is small at the time of development, especially for photolithography which uses a high-energy beam as a light source, and especially be provided a chemically amplified resist composition.
Owner:SHIN ETSU CHEM IND CO LTD

Positive resist composition

A positive resist composition comprising (A) a resin containing at least one group that is decomposed by the action of an acid to generate an alkali-soluble group and (B) at least two compounds selected from (B1) a compound that generates an aliphatic or aromatic sulfonic acid substituted with at least one fluorine atom, (B2) a compound that generates an aliphatic or aromatic sulfonic acid that does not contain a fluorine atom, (B3) a compound that generates an aliphatic or aromatic carboxylic acid substituted with at least one fluorine atom and (B4) a compound that generates an aliphatic or aromatic carboxylic acid that does not contain a fluorine atom, as (B) a compound that generates an acid upon irradiation of an actinic ray or radiation, wherein the group that is decomposed by the action of an acid contained in the resin, (A) includes a group represented by formula (Y) defined in the specification.
Owner:FUJIFILM HLDG CORP +1

Positive resist composition for immersion lithography and method for forming resist pattern

ActiveUS20080090171A1Good lithography characteristicSuitable hydrophobicityPhotosensitive materialsRadiation applicationsSolubilityHydrogen atom
Provided are a positive resist composition for immersion lithography, and a method for forming a resist pattern using the same, wherein the positive resist composition comprises a resin component (A) that increases its alkali solubility under action of an acid, an acid generator component (B) that generates an acid upon exposure, and a resin component (C) containing a constituent unit (c1) represented by the following Chemical Formula 1: wherein R1 is a hydrogen atom or a methyl group; R2 and R3 are each independently represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms; n is an integer of 0 to 3; and Z is an aliphatic cyclic group having 4 to 12 carbon atoms, having a fluorine atom and / or a fluorinated alkyl group as a substituent.
Owner:TOKYO OHKA KOGYO CO LTD

Positive resist composition for use with electron beam, x-ray or EUV and pattern forming method using the same

A positive resist composition for use with electron beam, X-ray or EUV and a pattern forming method using the positive resist composition are provided, the positive resist composition including: (A) a resin capable of decomposing under an action of an acid to increase a dissolution rate in an aqueous alkali solution; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a basic compound; and (D) an organic solvent, wherein the entire solid content concentration in the resist composition is from 1.0 to 4.5 mass % and a ratio of (B) the compound capable of generating an acid upon irradiation with actinic rays or radiation is from 10 to 50 mass % based on the entire solid content.
Owner:FUJIFILM CORP

Positive resist composition and pattern forming method using the same

A positive resist composition, includes: (A) a resin having a property of becoming soluble in an alkali developer under an action of an acid and having a phenolic hydroxyl group and a weight average molecular weight of 1,500 to 3,500; and (B) a compound capable of generating a sulfonic acid upon irradiation with actinic rays or radiation, wherein a ratio of dissolution rates of an exposed area and an unexposed area in an aqueous 2.38 wt % tetramethylammonium hydroxide at 23° C. under atmospheric pressure is in a range from 200 to 5,000 times, and a pattern forming method uses the composition.
Owner:FUJIFILM CORP

Positive resist composition

A positive resist composition comprising:(A1) a resin containing at least one type of repeating unit represented by the specific formula and additionally containing at least one type of repeating unit represented by the specific formula, which increases the solubility in an alkali developing solution by the action of an acid, and(B) a compound which is capable of generating an acid by the action of actinic ray or radiation.
Owner:FUJIFILM HLDG CORP +1

Positive resist composition for immersion lithography and method for forming resist pattern

ActiveUS7494762B2Good lithography characteristicSuitable hydrophobicityPhotosensitive materialsRadiation applicationsPolymer scienceHydrogen atom
Provided are a positive resist composition for immersion lithography, and a method for forming a resist pattern using the same, wherein the positive resist composition comprises a resin component (A) that increases its alkali solubility under action of an acid, an acid generator component (B) that generates an acid upon exposure, and a resin component (C) containing a constituent unit (c1) represented by the following Chemical Formula 1:wherein R1 is a hydrogen atom or a methyl group; R2 and R3 are each independently represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms; n is an integer of 0 to 3; and Z is an aliphatic cyclic group having 4 to 12 carbon atoms, having a fluorine atom and / or a fluorinated alkyl group as a substituent.
Owner:TOKYO OHKA KOGYO CO LTD

Positive resist composition and method of forming resist pattern

ActiveUS20090233220A1Few defectGood lithographic propertyOrganic chemistryPhotosensitive materialsResistSolubility
Provided are a positive resist composition and a resist pattern forming method having fewer defects and superior lithographic characteristics. The positive resist composition includes a resin component (A) which has on a main chain a structural unit derived from an (α-lower alkyl)acrylate ester and exhibits increased alkali solubility under the action of an acid, and an acid generating component (B) which generates the acid upon irradiation with radiation, in which the resin component (A) is a copolymer having at least two structural units which is obtained by incorporating an acid when polymerizing at least one monomer for the production thereof.
Owner:TOKYO OHKA KOGYO CO LTD

Positive resist composition and pattern formation method using the same

A positive resist composition comprising: (A) a resin having alicyclic hydrocarbon groups in side chains, containing specified two types of repeating units, which increases the solubility in an alkali developing solution by the action of an acid; and (B) a particular sulfonium compound having a specified structure and capable of generating an acid upon irradiation with an actinic ray or radiation.
Owner:FUJIFILM HLDG CORP +2

Positive Resist Composition and Method for Resist Pattern Formation

A positive-working resist composition of a wide level of DOF and a method for resist pattern formation are provided. This composition is a positive-working resist composition comprising a resin component (A) which, upon action by an acid, increases alkali solubility and an acid generating agent component (B) which produces an acid upon exposure. The component (A) is a copolymer comprising n (n=an integer of 4 to 6) types of constitutional units different from each other in structure, and the proportion of each constitutional unit in the copolymer is more than 0% by mole and not more than 100 / (n−1)% by mole.
Owner:TOKYO OHKA KOGYO CO LTD

Positive resist composition and pattern forming method using the same

A positive resist composition, includes: (B) a resin containing a repeating unit represented by formula (Ia) or (Ib) as defined in the specification, which decomposes under an action of an acid to increase a solubility of the resin (B) in an aqueous alkali solution; and (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, and a pattern forming method uses the composition.
Owner:FUJIFILM CORP

Positive resist composition

A positive resist composition comprises: (A) a resin capable of decomposing by the action of an acid to increase the solubility in an alkali developer; and (B) a compound capable of generating an acid upon irradiation with one of an actinic ray and a radiation, wherein the resin (A) contains a specified repeating unit.
Owner:FUJIFILM HLDG CORP +1

Positive resist composition

A positive resist composition comprising the components of: (A) a compound capable of generating an acid upon irradiation with one of an actinic ray and a radiation; (B) a resin that is insoluble or slightly soluble in alkalis, but becomes alkali-soluble under an action of an acid; (C) a basic compound; and (D) a compound comprising at least three hydroxyl groups or at least three substituted hydroxyl groups, and comprising at least one cyclic structure.
Owner:FUJIFILM HLDG CORP +1

High resolution silicon-containing resist

Non-chemically amplified radiation sensitive resist compositions containing silicon are especially useful for lithographic applications, especially E-beam lithography. More particularly, radiation-sensitive resist compositions comprising a polymer having at least one silicon-containing moiety and at least one radiation-sensitive moiety cleavable upon radiation exposure to form aqueous base soluble moiety can be used to pattern sub-50 nm features with little or no blur.
Owner:IBM CORP

Monomer, polymer, resist composition, and patterning process

A monomer (1) is prepared by reacting a compound (9) with a base or metal to form a metal enolate reagent, and reacting the metal enolate reagent with an acyloxyketone compound (8). A polymer derived from the monomer is used as base resin to formulate a resist composition, which is shelf stable and displays a high dissolution contrast, controlled acid diffusion and low roughness in forming positive pattern via alkaline development and in forming negative pattern via organic solvent development.
Owner:SHIN ETSU CHEM IND CO LTD

Method of preparing polymer compound

A method for preparing a polymer compound including copolymerizing a monomer (m0-1) and a monomer (m0-2) to obtain a first polymer compound and causing the first polymer compound and an acid component to react with each other to obtain a second polymer compound. In the formulae, R1 and R2 are each a hydrogen atom, an alkyl group having 1 to 5 carbon atoms and a halogenated alkyl group having 1 to 5 carbon atoms, Va01 is a divalent hydrocarbon group which may have an ether bond, na01 is an integer of 0 to 2, Ra10 is a tertiary alkyl ester-type acid dissociable group, Va02 is a divalent linking group containing a heteroatom, or a single bond, Ra07 is a monovalent organic group, na021 is an integer of 0 to 3, Ra20 is an acid dissociable group, and na022 is an integer of 1 to 3.
Owner:TOKYO OHKA KOGYO CO LTD

Positive resist composition

A positive resist composition comprising (A) a compound that generates an acid upon irradiation of an actinic ray or radiation, (B) a resin that is insoluble or hardly soluble in an alkali developing solution but becomes soluble in the alkali developing solution by the action of an acid, and (C) a compound having at least one group that is decomposed with an acid to generate a carboxylic acid and at least three groups selected from hydroxy group and substituted hydroxy group.
Owner:FUJIFILM CORP +1

High resolution silicon-containing resist

Non-chemically amplified radiation sensitive resist compositions containing silicon are especially useful for lithographic applications, especially E-beam lithography. More particularly, radiation-sensitive resist compositions comprising a polymer having at least one silicon-containing moiety and at least one radiation-sensitive moiety cleavable upon radiation exposure to form aqueous base soluble moiety can be used to pattern sub-50 nm features with little or no blur.
Owner:IBM CORP

Positive resist composition

A positive resist composition having excellent mask linearity is provided. This composition is a positive resist composition comprising a base resin component (A) and an acid generator component (B) generating an acid under exposure, wherein the base resin component (A) is a silicone resin and the acid generator component (B) contains an onium salt-based acid generator (B1) containing a perfluoroalkyl sulfonate ion having 3 or 4 carbon atoms as an anion.
Owner:TOKYO OHKA KOGYO CO LTD

Positive resist composition

The present invention provides a positive resist composition comprising(A) at least one resin selected from the group consisting of{circle around (1)} resin which is itself insoluble or poorly soluble in an alkali aqueous solution but cause a chemical change by the action of an acid to become soluble in an alkali aqueous solution with a proviso that the resin is not novolak resin and② alkali-soluble resin,(B) novolak resin containing protective group which can be dissociated by the action of an acid and(C) an acid generator.
Owner:SUMITOMO CHEM CO LTD

Compound, polymer, resist composition, and patterning process

There is disclosed a polymer containing at least a repeating unit represented by the following general formula (1), and the resist composition containing the polymer as a base resin, especially a chemically amplified resist composition. There can be provided a resist composition which has etching resistance in a practical use level, and is excellent in an adhesion property with a substrate and an affinity with a developer, and has a sensitivity and resolving power which is far excellent compared with a conventional one, wherein swelling is small at the time of development, especially for photolithography which uses a high-energy beam as a light source, and especially be provided a chemically amplified resist composition
Owner:SHIN ETSU CHEM IND CO LTD
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