4 results about "Image converter" patented technology

An image processing apparatus comprises a receiver (401) receiving an image comprising first pixel brightnesses encoded in accordance with a perceptually uniform Electrical to Optical Transfer Function, EOTF. A converter converts this to second pixel brightnesses encoded in accordance with an EOTF representing a logarithmic mapping from optical light values to the second pixel brightnesses and an image processor circuit (411) applies a brightness adjustment processing to the second pixel brightnesses. The converter (410) comprises a first converter (601, 605) generating intermediate pixel brightnesses applying a logarithm function to the first pixel brightnesses A second converter (603) generates intermediate pixel brightnesses by applying a second logarithm function to an output value of the perceptually uniform EOTF for the first pixel brightness divided by a divisor equal to the first pixel brightnesses raised to a power of an exponent having a value exceeding 1. A combiner generates the second pixel brightnesses by combining the intermediate pixel brightnesses.

1. The name of the design product: image instrument. 2. The use of the design product: the design product is used for image measuring instrument, mainly for measuring parts. 3. The design points of the design product: in shape. 4. The picture or photo that can best show the design points: perspective view 1.

Complementary metal-oxide-semiconductor (CMOS) image sensor, comprising: i) a bias junction consisting of a first semiconductor material type and electrically coupled to a voltage source to apply a reverse bias of opposite polarity to a polarity of the first semiconductor material type to the bias junction; ii) a pixel in a pixel array, comprising: a photosensitive element, a first well consisting of a second semiconductor material type, and a second well consisting of the first semiconductor material type, and active CMOS elements used for at least one of 1) reading and 2) resetting the image data acquired by the photosensitive element; and iii) an implanted, buried layer consisting of the second semiconductor material type, extending over a region representing the pixel array below the second well consisting of the first semiconductor material type;wherein the implanted, buried layer, which consists of the second semiconductor material type, is arranged to interact with the blocking bias applied by the voltage source to the bias junction to reduce a parasitic current path between the second well, which consists of the first semiconductor material type and is used by the active CMOS elements, and a substrate, resulting in more uniform pixel-to-pixel performance in an image sensor with two or more pixels.

An image masking system (100) is disclosed. The system (100) includes a segmentation module (130) configured to extract one or more regions of interest by processing an input query image using a segmentation network. The segmentation module (130) is further configured to select one or more segments from the one or more extracted regions of interest based on a user indicator. The system (100) includes a mask generation module (140) configured to generate a binary mask for the selected segments on the input query image. The system (100) further includes an image transformer module (150) configured to generate a masked image by performing an arithmetic operation on the binary mask and the input query image. The image transformer module (150) is further configured to extract an embedding of the masked image using one of a convolutional neural network architecture or a Transformer architecture.