The invention discloses a two-dimensional layered
perovskite type
memristor, a preparation method and application thereof, and belongs to the technical field of
perovskite type memristors. A high-quality Cs2Pb (SCN) 2I2 thin film is prepared through a low-temperature solution method, the Al / Cs2Pb (SCN) 2I2 / FTO vertical structure
memristor device is constructed, the device has excellent stability and carrier transport characteristics, continuous, reversible and bidirectional symmetrical resistance regulation and control are achieved under
low voltage, and the device has good application prospects. And the core characteristics of long-term enhancement / inhibition (LTP-LTD), time dependent
plasticity (PPF), history dependent
plasticity and the like of the biological synapses can be accurately reproduced. The device can stably realize addition, subtraction, multiplication and mixed arithmetic operation through
voltage pulse sequence combination, and meets the requirements of exchange law,
distribution law and reversibility. The invention provides a novel
material selection and preparation scheme for the development of the high-performance
memristor, lays an experimental and theoretical foundation for the hardware implementation of neuromorphic calculation, and has an important application prospect.