A production method for obtaining a stacked device from a
wafer is provided. The
wafer has: a device forming region formed on a surface having plural devices formed thereon, the devices having surfaces and thicknesses; a
peripheral extra region surrounding the device forming region; and plural
metal electrodes embedded in the surfaces of the devices and having thicknesses which are equal to or larger than the thicknesses of the devices. The method includes: a protective tape applying process for applying a protective tape to the surface of the
wafer; a rear surface recess forming process for
thinning only a region, which corresponds to the device forming region, on a rear surface by
grinding, thereby forming a recess on the rear surface, forming a ring-shaped protrusion projecting from the rear surface on the
peripheral extra region, and exposing the
metal electrodes at the rear surface; an
etching process for removing mechanical damage, which is provided to the recess by the
grinding, by
etching to the recess, and forming a rear surface side
electrode portion by projecting the exposed
metal electrodes from a bottom surface of the recess; and a dividing process for dividing the wafer into the devices.