The invention discloses a high-power eutectic solder inversion structure for an
ultraviolet LED
chip. The high-power eutectic solder inversion structure mainly comprises an LED
chip, a
silica gel layer, a packaging
adhesive layer, a lens, an antireflection film, reflection cups, a miniature PCB substrate,
copper layers, conductive and heat-conducting
adhesive layers and bonding pads, wherein the PCB substrate comprises an upper
surface layer, a middle layer and a lower
surface layer; a groove is arranged in the middle of the upper
surface layer of the substrate; and a second
copper layer, an SiC layer and a second heat-conducting
adhesive layer are sequentially arranged in the groove from bottom to top. Better
light transmission and heat dissipation effects are obtained through improving the order of various
layers of the substrate and the interlayer structures, and meanwhile, the halo phenomenon is avoided to the maximum extent.
Electrode strips are also arranged at two ends of the substrate, and meanwhile, the structure of the miniature PCB substrate is improved, thereby assisting the
chip in dissipating heat; and a
solid heat emission hole filled with
copper is arranged between the upper surface layer and the lower surface layer, thereby accelerating heat loss. The high-power eutectic solder inversion structure also has the advantages of being reasonable in structure, low in technological requirements, easy to produce, high in yield and high in light extracting rate.