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78 results about "Bit pairing" patented technology

In telecommunication, bit pairing is the practice of establishing, within a code set, a number of subsets that have an identical bit representation except for the state of a specified bit. Note: An example of bit pairing occurs in the International Alphabet No. 5 and the American Standard Code for Information Interchange (ASCII), where the upper case letters are related to their respective lower case letters by the state of bit six.

Multi-level ONO flash program algorithm for threshold width control

Methods of programming a wordline of multi-level flash memory cells (MLB) having three or more data levels per bit corresponding to three or more threshold voltages are provided. The present invention employs an interactive program algorithm that programs the bits of the wordline of memory cells in two programming phases, comprising a rough programming phase and a fine programming phase to achieve highly compact Vt distributions. In one example, cell bit-pairs that are to be programmed to the same program pattern are selected along a wordline. Groups of sample bits are chosen for each wordline to represent each possible program level. The sample bits are then programmed to determine a corresponding drain voltage at which each sample group is first programmed. This fast-bit drain voltage (Fvd) for each program level essentially provides a wordline specific program characterization of the Vt required for the remaining bits of that wordline. In the rough programming phase, the bits of core cells are then programmed from a starting point that is relative to (e.g., slightly less than or equal to) the fast-bit Vd and according to a predetermined Vd and Vg profile of programming pulses. The bits of the complementary bit-pairs are alternately programmed in this way until the Vt of the bits attains a rough Vt level, which is offset lower than the final target threshold voltage level. Then in the second fine programming phase, the bits of the MLB cells of the wordline are further programmed with another predetermined Vd and Vg profile of programming pulses until the final target threshold voltage is achieved. The Vd and Vg profiles of programming pulses may further be tailored to accommodate the various bit-pair program pattern combinations possible. In this way, the bits of each wordline are fine-tune programmed to a data state to achieve a more precise Vt distribution, while compensating for the effects of complementary bit disturb.
Owner:LONGITUDE FLASH MEMORY SOLUTIONS LTD

Multi-level ONO flash program algorithm for threshold width control

Methods of programming a wordline of multi-level flash memory cells (MLB) having three or more data levels per bit corresponding to three or more threshold voltages are provided. The present invention employs an interactive program algorithm that programs the bits of the wordline of memory cells in two programming phases, comprising a rough programming phase and a fine programming phase to achieve highly compact Vt distributions. In one example, cell bit-pairs that are to be programmed to the same program pattern are selected along a wordline. Groups of sample bits are chosen for each wordline to represent each possible program level. The sample bits are then programmed to determine a corresponding drain voltage at which each sample group is first programmed. This fast-bit drain voltage (Fvd) for each program level essentially provides a wordline specific program characterization of the Vt required for the remaining bits of that wordline. In the rough programming phase, the bits of core cells are then programmed from a starting point that is relative to (e.g., slightly less than or equal to) the fast-bit Vd and according to a predetermined Vd and Vg profile of programming pulses. The bits of the complementary bit-pairs are alternately programmed in this way until the Vt of the bits attains a rough. Vt level, which is offset lower than the final target threshold voltage level. Then in the second fine programming phase, the bits of the MLB cells of the wordline are further programmed with another predetermined Vd and Vg profile of programming pulses until the final target threshold voltage is achieved. The Vd and Vg profiles of programming pulses may further be tailored to accommodate the various bit-pair program pattern combinations possible. In this way, the bits of each wordline are fine-tune programmed to a data state to achieve a more precise Vt distribution, while compensating for the effects of complementary bit disturb.
Owner:LONGITUDE FLASH MEMORY SOLUTIONS LTD

General high-performance Radix-4SOVA decoder and decoding method

The invention discloses a general high-performance Radix-4SOVA decoder and a decoding method. In the prior art, in the Radix-4SOVA decoder, only a binary system Turbo code based on bit interleaving is supported. By using the decoder and the method of the invention, the above problem is mainly solved. The method has the following steps of receiving channel information and storing; reading the channel information of a first component code, carrying out first component decoding which means that a branch metric, a cumulative path metric, credibility, a log-likelihood ratio and extrinsic information are successively calculated, interleaving the extrinsic information and storing; reading the channel information of a second component code and completing secondary component decoding; determining whether a maximum iteration is reached; if the maximum iteration is not reached, starting next iteration decoding; otherwise, carrying out hard decision on the log-likelihood ratio so as to obtain an estimation value of a decoding bit and finishing the decoding. According to the invention, a credibility updating method based on a bit pair is used; the general and configurable high performance decoding of a binary system Turbo code and a duobinary system convolution Turbo code can be realized; the method can be used in a general and configurable Turbo decoder in a LTE and WiMAX system.
Owner:XIDIAN UNIV

Test Method and Test Program of Semiconductor Logic Circuit Device

The number of output switching scan flip-flops in a capture operation is decreased, which decreases the capture power consumption, so that the reduction of the power supply voltage can be decreased to decrease generation of an erroneous test. For this purpose, 0 or 1 is filled in unspecified bits within a test cube to decrease the output switching scan flip-flops, to convert the test cube into a test vector with no unspecified bit X. In a combinational portion 11, when there is one or more unspecified bits X in pseudo external input lines PPI and there is no unspecified bit X in pseudo external output lines PPO, an assigning operation is carried out so that the same logic values as bits of the pseudo external output lines PPO corresponding to all the unspecified bits X are assigned thereto (step 205). In the combinational portion 11, when there is one or more unspecified bits X in the pseudo external output lines PPO and there is no unspecified bit X in the pseudo external input lines PPI, first and second justifying operations are carried out, i.e., one unspecified bit X of the pseudo external output lines PPO is selected as a target unspecified bit X, and a necessary logic value is determined for an unspecified bit X of the test cube so that the same logic value as a bit of the pseudo external input lines PPI corresponding to that unspecified bit X or its opposite logic value may appear at that unspecified bit X (steps 207 and 209). In the combinational portion, when there are one more unspecified bits not only in the pseudo external input lines PPI but also the pseudo external output lines PPO, an assigning operation, a justifying operation or first and second assigning/justifying operations are performed upon a focused bit pair “ppi” and “ppo” (steps 210 to 218).
Owner:WEN XIAOQUING +1
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