The invention discloses a storage
logic optimization method for a storage-intensive
chip, which is applied to the field of digital back-end design of an
integrated circuit, and aims to solve the problems of too many SRAMs (
Static Random Access Memory), unreasonable SRAM distribution and relatively strong relevance in the traditional design. The problems of difficulty in
time sequence convergence, shortage of winding resources, low design efficiency, more iteration times and the like caused by
physical separation between the SRAM and a standard unit are solved; the method comprises the following steps: firstly, carrying out SRAM merging analysis based on
time sequence and area constraint, and analyzing the feasibility of merging a plurality of small-capacity SRAMs into a large-capacity SRAM according to the
time sequence margin; then, executing the combination of the SRAMs, and generating a combined SRAM
macro cell; then, a storage logic group IP is constructed, the merged SRAM
macro cell and a part of the IP having a strong logic connection relationship with the merged SRAM
macro cell are processed, fine routing and time
sequence optimization are carried out in the IP, and module-level time sequence sign-off is realized; and finally, outputting the storage logic group IP as a hardcore module, and integrating the storage logic group IP into a top-layer
chip design.