The invention relates to the field of
semiconductor cleaning, and discloses a cleaning process for improving the surface quality of a
wafer, which comprises the steps of
wafer pre-cleaning and
wafer terminal cleaning, in the wafer pre-cleaning step, the wafer is sequentially subjected to first organic solution cleaning, pure water ultrasonic cleaning, mechanical scrubbing and second organic solution cleaning; and in the wafer
terminal cleaning step, the wafer is sequentially subjected to organic
emulsion solution cleaning, SPM cleaning, HQDR cleaning, high-concentration SC1 cleaning, QDR cleaning, SC2 cleaning, DHF cleaning, low-concentration SC1 cleaning,
ozone water combined cleaning and spin-
drying. According to the method, the cleaning process is integrated and optimized from the cleaning mechanism, the pertinence is higher, the cleaning process is more complete, the method has the advantages of being better in particulate matter cleaning effect, more thorough in stubborn
pollutant removal, bidirectional in
microstructure protection and the like, the wafer quality is greatly improved, operation is easy and convenient to implement, the cleaning cost is effectively reduced, and the method has good popularization prospects.