The application discloses a
PIN diode modeling and simulation method based on LP-CDI-FDTD, belongs to the field of
computational electromagnetics,
microwave technology and circuit
simulation, and comprises the following steps: firstly, an equivalent lumped parameter model of a
semiconductor device is established, and a
voltage-current relationship thereof is obtained; then, the relationship is converted into an equivalent
current density, and is embedded into a Maxwell curl equation according to the relationship between an
electric field and a
voltage, so as to construct an electromagnetic-circuit
coupling equation set; further, a leapfrog compliant
divergence unconditional stable
time domain finite difference method is adopted to discretize the
coupling equation set, and a discrete updating equation is obtained; finally, iterative calculation is carried out according to the equation, and electromagnetic fields and device states are synchronously updated. The method realizes the inherent
strong coupling between full-wave electromagnetic fields and
semiconductor physical processes, and breaks through the
time step restriction caused by a CFL condition in traditional methods by using the unconditional stability of the
algorithm, so that the calculation efficiency can be significantly improved when simulating a device containing a
fine structure.