The invention relates to the technical field of spectrum chips, in particular to a two-dimensional material spectrum
chip structure and a spectrum measurement method.The two-dimensional material spectrum
chip structure comprises a substrate, a
gate dielectric layer, a two-dimensional material film, a
common source electrode and a plurality of drain electrodes, the
gate dielectric layer covers the substrate, and the two-dimensional material film covers the
gate dielectric layer; the two-dimensional material film is a continuous and unpatterned film, one end of the two-dimensional material film is in contact with the common-source
electrode, the other end of the two-dimensional material film is in contact with a plurality of drain electrodes arranged at intervals, and on the basis of
global grid voltage applied to the substrate, when mutually-independent source-drain bias
voltage is applied to the independent drain electrodes, the drain electrodes are separated from the common-source
electrode. And a plurality of optical detection units with different
spectral response characteristics are formed among the substrate, the two-dimensional material film and the drain electrodes. According to the scheme, the structure is simple, the spectrum detection characteristic of the whole
chip can be dynamically reconfigured by adjusting the bias
voltage value on the drain electrode, one chip has multiple purposes, the adjustable measurement of the spectrum detection characteristic of a to-be-measured optical
signal is realized, and the measurement accuracy is improved.