7 results about "Cadmium Compound" patented technology

The invention belongs to the technical field of preparation of semiconductor crystal materials for high-performance radiation detection, and particularly relates to a preparation method of a low-twin-line tellurium-cadmium compound single crystal based on a moving heater method. Directional seed crystals with specific crystallographic orientation, an alloy material and a polycrystal feeding material are sequentially arranged in the growth container from bottom to top, the directional seed crystals and the polycrystal feeding material are both Cd1-xZnxTe, and the alloy material is composed of Te and Cd1-xZnxTe pre-dissolved in the Te; a moving heater method is adopted, an alloy material is melted in an axial gradient temperature field to form a melting zone, and the melting zone is driven to directionally migrate through relative movement of a growth container and the temperature field, so that Cd1-xZnxTe is directionally crystallized and grown on a seed crystal. The method can effectively inhibit the formation of twin crystal lines, obtains the tellurium-cadmium compound single crystal with a complete structure and uniform components, and can be industrially used in the fields of high-performance radiation detection, medical imaging and the like.

This invention belongs to the field of semiconductor material surface metallization technology, specifically relating to a method for depositing pure platinum electrodes on the surface of cadmium telluride (CdT) and a semiconductor functional device. The invention first polishes and cleans the CdT crystal, then prepares a patterned mask layer by spin-coating a negative photoresist followed by baking, exposure, and development. A chemical plating solution is prepared using a mixed solvent of methanol and N,N-dimethylformamide. The masked crystal is immersed in the plating solution to perform a chemical plating reaction, depositing a pure platinum coating in a predetermined area of ​​the crystal. Finally, the mask layer is peeled off to obtain a CdT crystal with patterned pure platinum electrodes. This method requires no vacuum environment, is simple to operate, and is low in cost. The resulting pure platinum coating is continuous and dense, exhibiting high bonding strength with the crystal substrate and forming good ohmic contact. It is also compatible with photolithography for fine processing, and has significant application value in semiconductor devices such as solar cells, infrared detectors, radiation detectors, and photon counting sensors.

The application discloses a method for reducing cadmium enrichment and improving magnesium content in ZJXZG001 under cadmium stress environment, and relates to the technical field of microbial fermentation, which comprises the following steps: inoculating ZJXZG001 into a liquid medium added with a water-soluble cadmium-containing compound after activation, and then carrying out fermentation culture after adding GABA in the liquid medium to obtain a fermentation product (containing fermentation liquor and mycelium), and filtering the fermentation liquor to obtain the mycelium; the added amount of GABA in the liquid medium is 10-25 mg / L; and the preservation number of the ZJXZG001 strain is CGMCC NO.40780. Pleurotus pulmonarius By adding GABA with a proper concentration under the condition of exogenous cadmium stress, the inhibitory effect of cadmium on the growth of the mycelium of ZJXZG001 can be effectively relieved, the enrichment amount of cadmium in the mycelium can be significantly reduced, the content of magnesium in the mycelium can be greatly improved, and the regulation effect of "one dose with multiple effects" can be realized. The method is suitable for the fermentation production of ZJXZG001 under the environment polluted by cadmium, and has good application prospect and industrialization value.

The application discloses an Alcaligenes faecalis strain X4 and application thereof, the strain has been preserved in the China Center for Type Culture Collection (CCTCC) on May 8, 2025, is located in Wuhan, Wuhan University, China, and the preservation number is CCTCC M 2025998. The Alcaligenes faecalis strain X4 provided in the application has a degradation rate of more than 70% to 50 mg / L flumorph within 72 h, and the maximum tolerance concentration of cadmium is 120 mg / L. The strain provides strong technical support for the treatment of flumorph and cadmium compound pollution, and has important significance for solving complex environmental pollution problems.

This invention discloses an anti-cadmium compound microbial agent, its preparation method, and its application, belonging to the field of microbial technology. The anti-cadmium compound microbial agent comprises three microorganisms: Bacillus, Priestella megaterium, and Burkholderia spp. These three microorganisms do not exhibit antagonistic interactions and each can thrive in environments containing Cd. 2+ This invention also discloses a method for preparing the cadmium-resistant compound microbial agent, which includes activating and expanding the cultivation of three microorganisms to obtain seed liquid, and then mixing them in a certain proportion. This invention further discloses the application of this cadmium-resistant compound microbial agent in remediating cadmium-contaminated soil, reducing the content of available cadmium in the soil, fixing or transforming cadmium ions in the environment, and promoting plant growth in cadmium-contaminated environments. The cadmium-resistant compound microbial agent of this invention, through the synergistic metabolism and biosorption of the three microorganisms, can efficiently fix and transform available cadmium in the soil, and has the advantages of high remediation efficiency, environmental friendliness, and low cost.

This invention discloses a method for separating and purifying indium from a cadmium-indium mixture. The method involves dissolving and filtering the substance to be purified, containing both cadmium and indium compounds, to obtain a mixed solution. Separation is then performed in a chromatograph using a high-efficiency cation exchange packing as the stationary phase and an aqueous solution of an organic acid as the mobile phase. The indium solution is collected based on the indium peak time. The high-efficiency cation exchange packing is a silica gel packing with sulfonic acid groups bonded to its surface; the organic acid is at least one selected from oxalic acid, citric acid, and α-hydroxyisobutyric acid, with a concentration of 10-400 mM and a pH of 2.0-5.5. This method achieves a maximum separation degree of 24.94, can separate indium purity of over 99.8% in a single step, has an analysis time of less than 35 minutes, and exhibits good scalability, meeting the production requirements of the medical isotope indium-111.

The invention belongs to the technical field of growth devices and preparation of tellurium-cadmium compound single crystals, and particularly relates to a THM crystal growth device and a method for preparing tellurium-cadmium compound crystals with a low cracking rate. The device comprises a furnace body, a furnace chamber heater, a liftable lifting support and a driving device of the liftable lifting support. A supporting groove for supporting the quartz crucible is formed in the top of the lifting support, and a heating module comprising an upper heat insulation layer, a bottom support heater and a lower heat insulation layer is arranged at the bottom of the lifting support. The preparation method comprises the steps of material filling, single crystal growth and collaborative cooling. Wherein in the collaborative cooling stage, a bottom support heater is started to be heated to be matched with the bottom temperature of the crystal ingot, and then the bottom support heater and a furnace cavity heater are synchronously cooled. According to the method, auxiliary heating and synchronous slow cooling are performed on the bottom of the crystal ingot at the cooling stage after crystal growth is finished, so that thermal stress accumulation at the bottom and in the crystal ingot is effectively relieved, crystal cracking is remarkably inhibited, and the structural integrity and the yield of the tellurium-cadmium compound single crystal are improved.